PD - 96177 IRFS4127PbF IRFSL4127PbF HEXFET Power MOSFET Applications D V 200V High Efficiency Synchronous Rectification in SMPS DSS Uninterruptible Power Supply R typ. 18.6m DS(on) High Speed Power Switching G max. 22m Hard Switched and High Frequency Circuits I 72A D S Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D D Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S S D Lead-Free G G 2 D Pak TO-262 IRFSL4127PbF IRFS4127PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 72 D C GS I T = 100C Continuous Drain Current, V 10V 51 A D C GS I Pulsed Drain Current 300 DM P T = 25C 375 W D C Maximum Power Dissipation Linear Derating Factor 2.5 W/C V 20 V GS Gate-to-Source Voltage 57 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 250 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.4 JC C/W R 40 Junction-to-Ambient JA www.irf.com 1 09/16/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 18.6 22 V = 10V, I = 44A DS(on) m GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 200V, V = 0V DSS DS GS A 250 V = 200V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 3.0 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 79 S V = 50V, I = 44A DS D Q Total Gate Charge 100 150 I = 44A g D Q Gate-to-Source Charge 30 V = 100V gs DS nC Q Gate-to-Drain Mille) Charge 31 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 69 = 44A, V =0V, V = 10V I sync g gd D DS GS t Turn-On Delay Time 17 V = 130V d(on) DD t Rise Time 18 I = 44A r D ns t Turn-Off Delay Time 56 R = 2.7 d(off) G t Fall Time 22 V = 10V f GS C Input Capacitance 5380 V = 0V iss GS C Output Capacitance 410 V = 50V oss DS C Reverse Transfer Capacitance 86 pF = 1.0MHz (See Fig.5) rss C eff. (ER) 360 V = 0V, V = 0V to 160V (See Fig.11) oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 590 V = 0V, V = 0V to 160V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol 76 S D (Body Diode) showing the A I Pulsed Source Current 300 integral reverse SM G (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 44A, V = 0V SD J S GS t T = 25C V = 100V, Reverse Recovery Time 136 rr J R ns T = 125C I = 44A 139 J F di/dt = 100A/s Q Reverse Recovery Charge 458 T = 25C rr J nC T = 125C 688 J I T = 25C Reverse Recovery Current 8.3 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.26mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25, I = 44A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value . When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 44A, di/dt 760A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. JC 2 www.irf.com