X-On Electronics has gained recognition as a prominent supplier of IRFSL4127PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFSL4127PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFSL4127PBF Infineon

IRFSL4127PBF electronic component of Infineon
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Part No.IRFSL4127PBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFT 200V 76A 23.2mOhm 100nC
Datasheet: IRFSL4127PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.9493 ea
Line Total: USD 4.95 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1000
Multiples : 1
1000 : USD 2.8444
2000 : USD 2.8158

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 4.9493
10 : USD 4.6233
25 : USD 4.225
100 : USD 3.3921
250 : USD 3.0903

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 10.4753
10 : USD 6.849
100 : USD 5.5989

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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We are delighted to provide the IRFSL4127PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFSL4127PBF and other electronic components in the MOSFETs category and beyond.

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PD - 96177 IRFS4127PbF IRFSL4127PbF HEXFET Power MOSFET Applications D V 200V High Efficiency Synchronous Rectification in SMPS DSS Uninterruptible Power Supply R typ. 18.6m DS(on) High Speed Power Switching G max. 22m Hard Switched and High Frequency Circuits I 72A D S Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D D Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S S D Lead-Free G G 2 D Pak TO-262 IRFSL4127PbF IRFS4127PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 72 D C GS I T = 100C Continuous Drain Current, V 10V 51 A D C GS I Pulsed Drain Current 300 DM P T = 25C 375 W D C Maximum Power Dissipation Linear Derating Factor 2.5 W/C V 20 V GS Gate-to-Source Voltage 57 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 250 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.4 JC C/W R 40 Junction-to-Ambient JA www.irf.com 1 09/16/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 18.6 22 V = 10V, I = 44A DS(on) m GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 200V, V = 0V DSS DS GS A 250 V = 200V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 3.0 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 79 S V = 50V, I = 44A DS D Q Total Gate Charge 100 150 I = 44A g D Q Gate-to-Source Charge 30 V = 100V gs DS nC Q Gate-to-Drain Mille) Charge 31 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 69 = 44A, V =0V, V = 10V I sync g gd D DS GS t Turn-On Delay Time 17 V = 130V d(on) DD t Rise Time 18 I = 44A r D ns t Turn-Off Delay Time 56 R = 2.7 d(off) G t Fall Time 22 V = 10V f GS C Input Capacitance 5380 V = 0V iss GS C Output Capacitance 410 V = 50V oss DS C Reverse Transfer Capacitance 86 pF = 1.0MHz (See Fig.5) rss C eff. (ER) 360 V = 0V, V = 0V to 160V (See Fig.11) oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 590 V = 0V, V = 0V to 160V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol 76 S D (Body Diode) showing the A I Pulsed Source Current 300 integral reverse SM G (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 44A, V = 0V SD J S GS t T = 25C V = 100V, Reverse Recovery Time 136 rr J R ns T = 125C I = 44A 139 J F di/dt = 100A/s Q Reverse Recovery Charge 458 T = 25C rr J nC T = 125C 688 J I T = 25C Reverse Recovery Current 8.3 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.26mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25, I = 44A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value . When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 44A, di/dt 760A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. JC 2 www.irf.com

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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