HEXFET Power MOSFET Applications V 40V D DSS Brushed motor drive applications R typ. 0.97m BLDC motor drive applications DS(on) Battery powered circuits max. 1.2m G Half-bridge and full-bridge topologies 426A I D (Silicon Limited) Synchronous rectifier applications S I 195A Resonant mode power supplies D (Package Limited) OR-ing and redundant power switches DC/DC and AC/DC converters D D DC/AC inverters S Benefits S D G G Improved gate, avalanche and dynamic dV/dt ruggedness 2 D Pak TO-262 Fully characterized capacitance and avalanche IRFS7430PbF IRFSL7430PbF SOA Enhanced body diode dV/dt and dI/dt capability GD S Lead-free Gate Drain Source Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity IRFSL7430PbF TO-262 Tube 50 IRFSL7430PbF IRFS7430PbF D2-Pak Tube 50 IRFS7430PbF Tape and Reel Left 800 IRFS7430TRLPbF 6.0 500 I = 100A D Limited By Package 400 4.0 300 T = 125C J 200 2.0 100 T = 25C J 0.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage R , Drain-to -Source On Resistance (m ) DS(on) Drain Cur I , rent (A) D Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 426 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 301 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I Pulsed Drain Current 1524 DM P T = 25C Maximum Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E Single Pulse Avalanche Energy 760 mJ AS (Thermally limited) E Single Pulse Avalanche Energy 1452 AS (Thermally limited) Avalanche Current I See Fig. 15, 16, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 JC C/W R Junction-to-Ambient (PCB Mount, steady-state) 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.014 V/C Reference to 25C, I = 1.0mA (BR)DSS J D 0.97 1.2 V = 10V, I = 100A m GS D R Static Drain-to-Source On-Resistance DS(on) 1.2 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.2 3.9 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V = 40V, V = 0V DSS DS GS = 40V, V = 0V, T = 125C 150 V DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.1 G Calculated continuous current based on maximum allowable junction Pulse width 400 s duty cycle 2%. temperature. Bond wire current limit is 195A. Note that current C eff. (TR) is a fixed capacitance that gives the same charging time oss limitations arising from heating of the device leads may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature Limited by T , starting T = 25C, L = 0.15mH Jmax J Limited by T starting T = 25C, L= 1mH, R = 50, I = 54A, V =10V. GS Jmax J G AS R = 50, I = 100A, V =10V. G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recom- I 100A, di/dt 990A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J