PD - 91365B
IRFR/U120N
HEXFET Power MOSFET
l Surface Mount (IRFR120N)
D
l Straight Lead (IRFU120N)
V = 100V
DSS
l Advanced Process Technology
l Fast Switching
R = 0.21
DS(on)
l Fully Avalanche Rated
G
Description
I = 9.4A
D
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
D-PAK I-PAK
The straight lead version (IRFU series) is for through-
TO-252AA TO-251AA
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V 9.4
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 6.6 A
D C GS
I Pulsed Drain Current 38
DM
P @T = 25C Power Dissipation 48 W
D C
Linear Derating Factor 0.32 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 91 mJ
AS
I Avalanche Current 5.7 A
AR
E Repetitive Avalanche Energy 4.8 mJ
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range
STG C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 3.1
JC
R Junction-to-Ambient (PCB mount) ** 50 C/W
JA
R Junction-to-Ambient 110
JA
www.irf.com 1
5/11/98IRFR/U120N
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1mA
(BR)DSS J D
R Static Drain-to-Source On-Resistance 0.21 V = 10V, I = 5.6A
GS D
DS(on)
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 2.7 S V = 25V, I = 5.7A
fs DS D
25 V = 100V, V = 0V
DS GS
I Drain-to-Source Leakage Current A
DSS
250 V = 80V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 100 V = 20V
GS
I
nA
GSS
Gate-to-Source Reverse Leakage -100 V = -20V
GS
Q Total Gate Charge 25 I = 5.7A
g D
Q Gate-to-Source Charge 4.8 nC V = 80V
gs DS
Q Gate-to-Drain Mille) Charge 11 V = 10V, See Fig. 6 and 13
gd GS
t Turn-On Delay Time 4.5 V = 50V
d(on) DD
t Rise Time 23 I = 5.7A
r D
ns
t Turn-Off Delay Time 32 R = 22
d(off) G
t Fall Time 23 R = 8.6, See Fig. 10
f D
D
Between lead,
L Internal Drain Inductance 4.5 nH
D
6mm (0.25in.)
G
from package
L Internal Source Inductance 7.5
S
and center of die contact S
C Input Capacitance 330 V = 0V
iss GS
C Output Capacitance 92 pF V = 25V
oss DS
C Reverse Transfer Capacitance 54 = 1.0MHz, See Fig. 5
rss
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
9.4
(Body Diode) showing the
A
G
I Pulsed Source Current integral reverse
SM
38
(Body Diode) p-n junction diode.
S
V Diode Forward Voltage 1.3 V T = 25C, I = 5.5A, V = 0V
SD J S GS
t Reverse Recovery Time 99 150 ns T = 25C, I = 5.7A
rr J F
Q Reverse RecoveryCharge 390 580 nC di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
Notes:
Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%
max. junction temperature. ( See fig. 11 )
This is applied for I-PAK, Ls of D-PAK is measured between lead and
V = 25V, starting T = 25C, L = 4.7mH
DD J
center of die contact
R = 25, I = 5.7A. (See Figure 12)
G AS
I 5.7A, di/dt 240A/s, V V ,
SD DD (BR)DSS Uses IRF520N data and test conditions
T 175C
J
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2 www.irf.com