PD-91293C IRFY9130C, IRFY9130CM 100V, P-CHANNEL POWER MOSFET THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9130C 0.3 -11.2A Ceramic IRFY9130CM 0.3 -11.2A Ceramic TO-257AA HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET Features: transistors also feature all of the well-established advantages Simple Drive Requirements of MOSFETs, such as voltage control, very fast switching, Ease of Paralleling ease of paralleling and electrical parameter temperature stability. Hermetically Sealed They are well-suited for applications such as switching power Electrically Isolated supplies, motor controls, inverters, choppers, audio amplifiers, Ceramic Eyelets high energy pulse circuits, and virtually any application where Ideally Suited For Space Level high reliability is required. The HEXFET transistors totally Applications isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = -10V, T = 25C Continuous Drain Current -11.2 D GS C A I V = -10V, T = 100C Continuous Drain Current -7.1 D GS C I Pulsed Drain Current -44 DM P T = 25C Max. Power Dissipation 75 W D C Linear Derating Factor 0.6 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 400 mJ AS I Avalanche Current -11.2 A AR E Repetitive Avalanche Energy 7.5 mJ AR dv/dt Peak Diode Recovery dv/dt -5.5 V/ns T Operating Junction -55 to 150 J C T Storage Temperature Range STG Lead Temperature 300(0.063in./1.6mm from case for 10 sec) Weight 4.3 (Typical) g For footnotes, refer to the last page www.irf.com 1 IRFY9130C, IRFY9130CM Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown -0.1 V/C Reference to 25C, I = -1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.30 V = -10V, I = -7.1A DS(on) GS D Resistance V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 2.5 S V > -15V, I = -7.1A fs DS DS I Zero Gate Voltage Drain Current -25 V = -80V ,V =0V DSS DS GS A -250 V = -80V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward -100 V = -20V GSS GS nA I Gate-to-Source Leakage Reverse 100 V = 20V GSS GS Q Total Gate Charge 30 V = -10V, I = -11.2A g GS D Q Gate-to-Source Charge 7.1 nC V = -50V gs DS Q Gate-to-Drain (Miller) Charge 21 gd t Turn-On Delay Time 60 V = -50V, I = -11.2A, d(on) DD D t Rise Time 140 V = -10V, R = r GS G ns t Turn-Off Delay Time 140 d(off) t Fall Time 140 f Measured from drain lead (6mm/0.25in. from L + L Total Inductance 6.8 S D nH package) to source lead (6mm/0.25in. from package) C Input Capacitance 800 V = 0V, V = -25V iss GS DS C Output Capacitance 350 pF f = 1.0MHz oss C Reverse Transfer Capacitance 125 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) -11.2 S A I Pulse Source Current (Body Diode) -44 SM V Diode Forward Voltage -4.7 V T = 25C, I = -11.2A, V = 0V j S GS SD t Reverse Recovery Time 250 nS T = 25C, I = -11.2A, di/dt -100A/s j rr F Q Reverse Recovery Charge 3.0 C V -50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 1.67 thJC C/W R Case-to-sink 0.21 thCS R Junction-to-Ambient 80 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on International Rectifier Website. 2 www.irf.com