Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175C Operating Temperature D V = 55V DSS Fast Switching Fully Avalanche Rated Lead-Free R = 0.014 DS(on) G Advanced HEXFET Power MOSFETs from I = 64A D International Rectifier utilize advanced processing S techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance 2 in any existing surface mount package. The D Pak is 2 D Pak TO-262 suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ48NL) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 64 D C GS I T = 100C Continuous Drain Current, V 10V 45 A D C GS I Pulsed Drain Current 210 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 130 W D C Linear Derating Factor 0.83 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 32 A AR E Repetitive Avalanche Energy 13 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) R Junction-to-Case 1.15 qJC C/W R Junction-to-Ambient ( PCB Mounted,steady-state)** 40 qJA www.irf.com 1 IRFZ48NS/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.058 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 14 m V = 10V, I = 32A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 24 S V = 25V, I = 32A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 81 I = 32A g D Q Gate-to-Source Charge 19 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 30 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 12 V = 28V d(on) DD t Rise Time 78 I = 32A r D ns t Turn-Off Delay Time 34 R = 0.85 d(off) G t Fall Time 50 V = 10V, See Fig. 10 f GS L Internal Source Inductance 7.5 nH Between lead, S and center of die contact C Input Capacitance 1970 V = 0V iss GS C Output Capacitance 470 V = 25V oss DS C Reverse Transfer Capacitance 120 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 700 190 mJ I = 32A, L = 0.37mH AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 64 (Body Diode) showing the * G I Pulsed Source Current integral reverse SM 210 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 32A, V = 0V SD J S GS t Reverse Recovery Time 68 100 ns T = 25C, I = 32A rr J F Q Reverse Recovery Charge 220 330 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by Pulse width 400s duty cycle 2%. max. junction temperature. ( See fig. 11 ) This is the destructive value not limited to the thermal limit. This is the thermal limited value. Starting T = 25C, L = 0.37mH J R = 25, I = 32A. (See Figure 12) G AS I 32A- di/d 220A/s, V V , SD DD (BR)DSS T 175C J % & % ( % )*+ ,, 2 www.irf.com