PD - 95403 IRL1004PbF HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D V = 40V Ultra Low On-Resistance DSS Dynamic dv/dt Rating 175C Operating Temperature R = 0.0065 DS(on) Fast Switching G Fully Avalanche Rated I = 130A D Lead-Free S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and TO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 130 D C GS I T = 100C Continuous Drain Current, V 10V 92 A D C GS I Pulsed Drain Current 520 DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 700 mJ AS I Avalanche Current 78 A AR E Repetitive Avalanche Energy 20 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 qJA www.irf.com 1 IRL1004PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.04 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.0065 V = 10V, I = 78A GS D R Static Drain-to-Source On-Resistance DS(on) 0.009 V = 4.5V, I = 65A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 63 S V = 25V, I = 78A fs DS D 25 V = 40V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 250 V = 32V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 100 I = 78A g D Q Gate-to-Source Charge 32 nC V = 32V gs DS Q Gate-to-Drain Mille) Charge 43 V = 4.5V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 16 V = 20V d(on) DD t Rise Time 210 I = 78A r D t Turn-Off Delay Time 25 R = 2.5, V = 4.5V d(off) G GS t Fall Time 14 R = 0.18, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 5330 V = 0V iss GS C Output Capacitance 1480 pF V = 25V oss DS C Reverse Transfer Capacitance 320 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 130 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 520 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 78A, V = 0V SD J S GS t Reverse Recovery Time 78 120 ns T = 25C, I = 78A rr J F Q Reverse Recovery Charge 180 270 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2% max. junction temperature. (See fig. 11) Calculated continuous current based on maximum allowable Starting T = 25C, L =0.23mH J junction temperature for recommended current-handling of the R = 25, I = 78A. (See Figure 12) G AS package refer to Design Tip 93-4 I 78A, di/dt 370A/s, V V , SD DD (BR)DSS T 175C J 2 www.irf.com