HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 40V DSS Dynamic dv/dt Rating 175C Operating Temperature R = 4.0m DS(on) G Fast Switching Fully Avalanche Rated I = 160A D Lead-Free S Description Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to TO-220AB its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 160 D C GS I T = 100C Continuous Drain Current, V 10V 110 A D C GS I Pulsed Drain Current 640 DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 620 mJ AS I Avalanche Current 95 A AR E Repetitive Avalanche Energy 20 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient (PCB Mounted) 62 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.038 V/C Reference to 25C, I = 1mA (BR)DSS J D 4.0 V = 10V, I = 95A GS D R Static Drain-to-Source On-Resistance DS(on) m 5.9 V = 4.3V, I = 40A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 93 S V = 25V, I = 95A fs DS D 20 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 250 V = 32V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 140 I = 95A g D Q Gate-to-Source Charge 48 nC V = 32V gs DS Q Gate-to-Drain Mille) Charge 60 V = 5.0V, See Fig. 6 gd GS t Turn-On Delay Time 18 V = 20V d(on) DD ns t Rise Time 270 I = 95A r D t Turn-Off Delay Time 38 R = 2.5 V = 4.5V d(off) G GS t Fall Time 37 R = 0.25 f D Between lead, D L Internal Drain Inductance 4.5 D nH 6mm (0.25in.) G from package 7.5 L Internal Source Inductance S and center of die contact S C Input Capacitance 6590 V = 0V iss GS C Output Capacitance 1710 pF V = 25V oss DS C Reverse Transfer Capacitance 350 = 1.0MHz, See Fig. 5 rss C Output Capacitance 6650 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 1510 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1480 V = 0V, V = 0V to 32V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 160 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 640 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 95A, V = 0V SD J S GS t Reverse Recovery Time 63 94 ns T = 25C, I = 95A rr J F Q Reverse RecoveryCharge 170 250 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D C eff. is a fixed capacitance that gives the same charging time oss Repetitive rating pulse width limited by as C while V is rising from 0 to 80% V oss DS DSS. max. junction temperature. ( See fig. 11). Calculated continuous current based on maximum allowable Starting T = 25C, L = 0.35mH J junction temperature for recommended current-handing of the R = 25 , I = 95A. (See Figure 12). G AS package refer to Design Tip 93-4. I 95A, di/dt 160A/s, V V , SD DD (BR)DSS Calculated continuous current based on maximum allowable T 175C. J junction temperature. Package limitation current is 75A. Pulse width 300s duty cycle 2%. 2 www.irf.com