PD- 9.1694A IRL3102 PRELIMINARY HEXFET Power MOSFET l Advanced Process Technology D l Optimized for 4.5V-7.0V Gate Drive V = 20V DSS l Ideal for CPU Core DC-DC Converters l Fast Switching R = 0.013 DS(on) G Description I = 61A D These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 4.5V 61 D C GS I T = 100C Continuous Drain Current, V 4.5V 39 A D C GS I Pulsed Drain Current 240 DM P T = 25C Power Dissipation 89 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 10 V GS V Gate-to-Source Voltage 14 V GSM (Start Up Transient, tp = 100s) E Single Pulse Avalanche Energy 220 mJ AS I Avalanche Current 35 A AR E Repetitive Avalanche Energy 8.9 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA 11/18/97IRL3102 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.016 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.015 V = 4.5V, I = 37A GS D R Static Drain-to-Source On-Resistance DS(on) 0.013 V = 7.0V, I = 37A GS D V Gate Threshold Voltage 0.70 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 36 S V = 16V, I = 35A fs DS D 25 V = 20V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 10V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 10V GS nA I GSS Gate-to-Source Reverse Leakage -100 V = -10V GS Q Total Gate Charge 58 I = 35A g D Q Gate-to-Source Charge 14 nC V = 16V gs DS Q Gate-to-Drain Mille) Charge 21 V = 4.5V, See Fig. 6 gd GS t Turn-On Delay Time 10 V = 10V d(on) DD t Rise Time 130 I = 35A r D ns t Turn-Off Delay Time 80 R = 9.0, V = 4.5V d(off) G GS t Fall Time 110 R = 0.28, f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 2500 V = 0V iss GS C Output Capacitance 1000 pF V = 15V oss DS C Reverse Transfer Capacitance 360 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 61 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 240 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 37A, V = 0V SD J S GS t Reverse Recovery Time 59 88 ns T = 25C, I = 35A rr J F Q Reverse Recovery Charge 110 160 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by I 35A, di/dt 100A/s, V V , SD DD (BR)DSS max. junction temperature. T 150C J Starting T = 25C, L = 0.36mH Pulse width 300s duty cycle 2%. J R = 25, I = 35A. G AS