PD - 9.1322B IRL3303 HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V = 30V DSS l Dynamic dv/dt Rating l 175C Operating Temperature R = 0.026 l Fast Switching DS(on) G l Fully Avalanche Rated I = 38A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance TO-220AB and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 38 D C GS I T = 100C Continuous Drain Current, V 10V 27 A D C GS I Pulsed Drain Current 140 DM P T = 25C Power Dissipation 68 W D C Linear Derating Factor 0.45 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 130 mJ AS I Avalanche Current 20 A AR E Repetitive Avalanche Energy 6.8 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case 2.2 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA 8/25/97IRL3303 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.026 V = 10V, I = 20A GS D R Static Drain-to-Source On-Resistance DS(on) 0.040 V = 4.5V, I = 17A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 12 S V = 25V, I = 20A fs DS D 25 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 24V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 26 I = 20A g D Q Gate-to-Source Charge 8.8 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 15 V = 4.5V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 7.4 V = 15V d(on) DD t Rise Time 200 I = 20A r D ns t Turn-Off Delay Time 14 R = 6.5, V = 4.5V d(off) G GS t Fall Time 36 R = 0.7, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 870 V = 0V iss GS C Output Capacitance 340 pF V = 25V oss DS C Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 38 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 140 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 72 110 ns T = 25C, I = 20A rr J F Q Reverse RecoveryCharge 180 280 nC di/dt = 100A/s rr Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t on S D Notes: Repetitive rating pulse width limited by I 20A, di/dt 140A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 175C J V = 25V, starting T = 25C, L = 470H DD J Pulse width 300s duty cycle 2%. R = 25, I = 20A. (See Figure 12) G AS