HEXFET Power MOSFET V 60 V DS R DS(on) max 5.5 m ( V = 4.5V) GS Q 44 nC g (typical) R 1.2 G (typical) I D 100 A PQFN 5X6 mm ( T = 25C) mb Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon (< 5.5 m Vgs = 4.5V ) Lower Conduction Losses Low Thermal Resistance to PCB (< 0.8C/W) Enables better thermal dissipation 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRLH5036TRPbF PQFN 5mm x 6mm Tape and Reel 4000 IRLH5036TR2PbF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 60 DS V V Gate-to-Source Voltage 16 GS I T = 25C Continuous Drain Current, V 10V 20 D A GS I T = 70C Continuous Drain Current, V 10V 16 D A GS I T = 25C Continuous Drain Current, V 10V 100 A D mb GS I T = 100C Continuous Drain Current, V 10V 100 D mb GS I Pulsed Drain Current 400 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 160 D mb Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250uA DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 3.7 4.4 V = 10V, I = 50A DS(on) GS D m 4.6 5.5 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.0 2.5 V GS(th) V = V , I = 150A DS GS D V Gate Threshold Voltage Coefficient -6.6 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS gfs Forward Transconductance 109 S V = 25V, I = 50A DS D Q Total Gate Charge 90 nC V = 10V, V = 30V, I = 50A g GS DS D Q Total Gate Charge 44 66 g Q Pre-Vth Gate-to-Source Charge 9.5 V = 30V gs1 DS Q Post-Vth Gate-to-Source Charge 4.5 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 18 I = 50A gd D Q Gate Charge Overdrive 12 godr Q Switch Charge (Q + Q ) 23 sw gs2 gd Q Output Charge 21 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.2 G t Turn-On Delay Time 23 V = 30V, V = 4.5V d(on) DD GS t Rise Time 48 I = 50A r D ns t Turn-Off Delay Time 28 R =1.7 d(off) G t Fall Time 15 f C Input Capacitance 5360 V = 0V iss GS pF C Output Capacitance 600 V = 25V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 286 mJ AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 28 42 ns T = 25C, I = 50A, V = 30V rr J F DD Q Reverse Recovery Charge 134 201 nC di/dt = 500A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R Junction-to-Mounting Base 0.5 0.8 J-mb Junction-to-Case C/W R (Top) 15 JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA