HEXFET Power MOSFET V -20 V DS TOP VIEW V 12 V GS max R DS(on) max 31 m D1 6D ( V = 4.5V) GS R DS(on) max D2 D 5D 53 m ( V = 2.5V) GS Q S 9.6 g typ nC G 3 4S 2mm x 2mm PQFN I D -8.5 A ( T = 25C) c(Bottom) Applications Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Benefits Low Thermal Resistance to PCB ( 13C/W) Enable better thermal dissipation Low Profile ( 1.0mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRLHS2242TRPbF PQFN 2mm x 2mm Tape and Reel 4000 IRLHS2242TR2PbF PQFN 2mm x 2mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage -20 V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 4.5V GS -7.2 D A Continuous Drain Current, V 4.5V I T = 70C GS -5.8 D A Continuous Drain Current, V 4.5V -15 I T = 25C C(Bottom) GS D A I T = 100C Continuous Drain Current, V 4.5V -9.8 GS D C(Bottom) Continuous Drain Current, V 4.5V (Wirebond Limited) -8.5 I T = 25C GS D C Pulsed Drain Current I -34 DM Power Dissipation P T = 25C 2.1 D A W Power Dissipation P T = 25C 9.6 D C(Bottom) Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250 A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.01 V/C Reference to 25C, I = -1mA D R DS(on) Static Drain-to-Source On-Resistance 25 31 V = -4.5V, I = -8.5A GS D m 43 53 V = -2.5V, I = -6.8A GS D V GS(th) Gate Threshold Voltage -0.4 -0.8 -1.1 V V = V , I = -10 A DS GS D V Gate Threshold Voltage Coefficient -3.8 mV/C GS(th) I Drain-to-Source Leakage Current -1.0 V = -16V, V = 0V DSS DS GS A -150 V = -16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage -100 V = -12V GSS GS nA Gate-to-Source Reverse Leakage 100 V = 12V GS gfs Forward Transconductance 10 S V = -10V, I = -8.5A DS D Q g Total Gate Charge 12 nC V =-10V, V = -10V, I = -8.5A GS DS D Q V = -10V g 9.6 DS Total Gate Charge Q gs 1.6 nC V = -4.5V Gate-to-Source Charge GS Q gd 3.7 I = -8.5A Gate-to-Drain Charge D Q Gate Charge Overdrive 4.3 godr Q Switch Charge (Q + Q ) 4.8 sw gs2 gd Q Output Charge 6.8 nC V = 16V, V = 0V oss DS GS R G Gate Resistance 17 t d(on) Turn-On Delay Time 7.9 V = -10V, V = -4.5V DD GS t r Rise Time 54 ID = -8.5A ns t d(off) Turn-Off Delay Time 54 R = 2.0 G t f Fall Time 66 C iss Input Capacitance 877 V = 0V GS C Output Capacitance 273 V = -10V oss pF DS C Reverse Transfer Capacitance 182 = 1.0KHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 18 mJ AS Avalanche Current I -8.5 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S -8.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -34 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage -1.2 V T = 25C, I = -8.5A, V = 0V J S GS t rr Reverse Recovery Time 27 41 ns T = 25C, I = -8.5A, V = -10V DD J F Q di/dt = 200A/s rr Reverse Recovery Charge 20 30 nC t on Forward Turn-On Time Time is dominated by parasitic Inductance Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 13 JC Junction-to-Case R (Top) 90 JC C/W Junction-to-Ambient R 60 JA Junction-to-Ambient R (<10s) 42 JA