PD - 9.1378A IRLI2203N PRELIMINARY HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V = 30V DSS l Isolated Package l High Voltage Isolation = 2.5KVRMS = 0.007 R DS(on) l Sink to Lead Creepage Dist. = 4.8mm G l Fully Avalanche Rated I = 61A D Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab TO-220 FULLPAK and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 61 D C GS I T = 100C Continuous Drain Current, V 10V 43 A D C GS I Pulsed Drain Current 400 DM P T = 25C Power Dissipation 47 W D C Linear Derating Factor 0.31 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 390 mJ AS I Avalanche Current 60 A AR E Repetitive Avalanche Energy 4.7 mJ AR dv/dt Peak Diode Recovery dv/dt 1.2 V/ns Operating Junction and -55 to + 175 T J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.2 JC C/W R Junction-to-Ambient 65 JA 11/1/96IRLI2203N Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 1mA (BR)DSS J D = 10V, I = 37A 0.007 VGS D R Static Drain-to-Source On-Resistance DS(on) 0.01 V = 4.5V, I = 31A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 47 S V = 25V, I = 60A fs DS D 25 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 24V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS nA I GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 110 I = 60A g D Q Gate-to-Source Charge 31 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 57 V = 4.5V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 15 V = 15V d(on) DD Rise Time 210 I = 60A tr D ns t Turn-Off Delay Time 29 R = 1.8, V = 4.5V d(off) G GS t Fall Time 54 R = 0.25, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 3500 V = 0V iss GS Output Capacitance 1400 V = 25V C oss DS pF C Reverse Transfer Capacitance 690 = 1.0MHz, See Fig. 5 rss C Drain to Sink Capacitance 12 = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D Continuous Source Current MOSFET symbol IS 61 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 37A, V = 0V SD J S GS t Reverse Recovery Time 94 140 ns T = 25C, I = 60A rr J F Q Reverse RecoveryCharge 280 410 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Specification changes Rev. Parameters Old spec. New spec. Comments Revision Date 1V (Max.) 2.5V No spec. Removed V Max. Specification 11/1/96 GS(th) GS(th) 1V (Max.) 20 16 Decrease V Max. Specification 11/1/96 GS GS Notes: Repetitive rating pulse width limited by I 60A, di/dt 140A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 175C J V = 15V, starting T = 25C, L = 220H DD J Pulse width 300s duty cycle 2%. R = 25, I = 60A. (See Figure 12) G AS t=60s, =60Hz Uses IRL2203N data and test conditions