IRLIB9343PbF HEXFET Power MOSFET Features Key Parameters V -55 V DS Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier R typ. V =-10V 93 m DS(ON) GS Applications R typ. V = -4.5V 150 m DS(ON) GS Low R for Improved Efficiency DSON Low Q and Q for Better THD and Improved Efficiency Q typ. 31 nC g G sw Low Q for Better THD and Lower EMI rr T max 175 C J 175C Operating Junction Temperature for Ruggedness Repetitive Avalanche Capability for Robustness and Reliability Lead-Free S D G TO-220 Full-Pak G D S Gate Drain Source Description This Digital Audio HEXFET is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRLIB9343PbF TO-220 Full-Pak Tube 50 IRLIB9343PbF Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-to-Source Voltage -55 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V -10V -14 D C GS I T = 100C Continuous Drain Current, V -10V -10 A D C GS I Pulsed Drain Current -60 DM P T = 25C Maximum Power Dissipation 33 W D C P T = 100C Maximum Power Dissipation 20 D C Linear Derating Factor 0.26 W/C T Operating Junction and -40 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10lb in (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 3.84 JC C/W Junction-to-Ambient (PCB Mount) 65 R JA 1 2017-04-27 IRLIB9343PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient -52 mV/C Reference to 25C, I = -1mA V / T D (BR)DSS J 93 105 V = -10V, I = -3.4A GS D R Static Drain-to-Source On-Resistance m DS(on) 150 170 V = -4.5V, I = -2.7A GS D V Gate Threshold Voltage -1.0 V GS(th) V = V , I = -250A DS GS D V T Gate Threshold Voltage Temp. Coefficient -3.7 mV/C GS(th)/ J -2.0 V = -55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -25 V = -55V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS gfs Forward Trans conductance 5.3 S V = -25V, I = -14A DS D Q Total Gate Charge 31 47 V = -44V g DS Q Pre-Vth Gate-to-Source Charge 7.1 I = -14A, gs D nC Q Gate-to-Drain Charge 8.5 V = -10V gd GS Q Gate Charge Overdrive 15 See Fig. 6 and 19. godr t Turn-On Delay Time 9.5 V = -28V, V = -10V d(on) DD GS t Rise Time 24 I = -14A r D ns t Turn-Off Delay Time 21 R = 2.5 d(off) G t Fall Time 9.5 f C Input Capacitance 660 V = 0V iss GS C Output Capacitance 160 V = -50V oss DS pF C Reverse Transfer Capacitance 72 = 1.0MHz, See Fig. 5 rss C eff. Effective Output Capacitance 280 V = 0V, V = 0V to 44V oss GS DS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact Avalanche Characteristics Typ. Max. Units Parameter E Single Pulse Avalanche Energy 190 mJ AS I A Avalanche Current AR See Fig. 14, 15, 17a, 17b E Repetitive Avalanche Energy mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I T = 25C -14 S C (Body Diode) showing the A integral reverse Pulsed Source Current I -60 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C,I = -14A,V = 0V SD J S GS t Reverse Recovery Time 57 86 ns T = 25C ,I = -14A rr J F Q Reverse Recovery Charge 120 180 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. starting T = 25C, L = 3.89mH, R = 25 , I = -10A. J G AS Pulse width 400s duty cycle 2%. R is measured at T of approximately 90C. J Limited by T . See Figs. 14, 15, 17a, 17b for repetitive avalanche information jmax 2 2017-04-27