HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET G 1 SOT-23 Footprint V = 20V DSS Low Profile (<1.1mm) 3 D Available in Tape and Reel R = 0.045 Fast Switching DS(on) S 2 Lead-Free Halogen-Free These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. Micro3 A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry s smallest footprint. This package, dubbed the Micro3 , is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Parameter Max. Units V Drain- Source Voltage 20 V DS I T = 25C Continuous Drain Current, V 4.5V 4.2 D A GS I T = 70C Continuous Drain Current, V 4.5V 3.4 A D A GS I Pulsed Drain Current 33 DM P T = 25C Power Dissipation 1.25 D A P T = 70C Power Dissipation 0.8 D A Linear Derating Factor 0.01 W/C V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Typ. Max. Units R Maximum Junction-to-Ambient 75 100 JA www.irf.com 1 09/25/12 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250uA (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.01 V/C Reference to 25C, I = 1.0mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.035 0.045 V = 4.5V, I = 4.2A DS(on) GS D 0.050 0.080 V = 2.5V, I = 3.6A GS D V Gate Threshold Voltage 0.60 1.2 V GS(th) V = V , I = 250A DS GS D V Gate Threshold Voltage Coefficient -3.2 mV/C GS(th) gfs Forward Transconductance 5.8 S V = 10V, I = 4.0A DS D I Drain-to-Source Leakage Current 1.0 V = 16V, V = 0V DSS DS GS A 25 V = 16V, V = 0V, T = 70C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS Q Total Gate Charge 8.0 12 I = 4.0A g D nC Q Gate-to-Source Charge 1.8 2.7 V = 10V gs DS Q Gate-to-Drain Mille) Charge 1.7 2.6 V = 5.0V gd GS t Turn-On Delay Time 7.5 V = 10V d(on) DD t Rise Time 10 I = 1.0A r D ns t Turn-Off Delay Time 54 R = 6 d(off) G t Fall Time 26 R = 10 f D C Input Capacitance 740 V = 0V iss GS pF C Output Capacitance 90 V = 15V oss DS C Reverse Transfer Capacitance 66 = 1.0MHz rss Source-Drain Rating and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 1.3 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 33 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 1.3A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 1.3A rr J F Q Reverse Recovery Charge 8.6 13 nC di/dt = 100A/s rr Repetitive rating pulse width limited by Surface mounted on FR-4 board, t max. junction temperature. ( See fig. 11 ) Pulse width 300s duty cycle 2 www.irf.com