Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET V R max (m I Surface Mount DSS DS(on) D Available in Tape & Reel -30V 98 V = -10V -3.0A GS Low Gate Charge 165 V = -4.5V -2.6A GS Lead-Free RoHS Compliant, Halogen-Free Description G 1 These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the 3 D designer with an extremely efficient device for use in battery and load management applications. 2 S A thermally enhanced large pad leadframe has been TM incorporated into the standard SOT-23 package to produce a Micro3 HEXFET Power MOSFET with the industry s smallest footprint. TM This package, dubbed the Micro3 , is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRLML5203TRPbF Micro3 (SOT-23) Tape and Reel 3000 IRLML5203TRPbF Parameter Max. Units V Drain- Source Voltage -30 V DS I T = 25C Continuous Drain Current, V -10V -3.0 D A GS I T = 70C Continuous Drain Current, V -10V -2.4 A D A GS I Pulsed Drain Current -24 DM P T = 25C Power Dissipation 1.25 D A P T = 70C Power Dissipation 0.80 D A Linear Derating Factor 10 mW/C V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 100 C/W JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.019 V/C Reference to 25C, I = -1mA (BR)DSS J D 98 V = -10V, I = -3.0A GS D R Static Drain-to-Source On-Resistance DS(on) m 165 V = -4.5V, I = -2.6A GS D V Gate Threshold Voltage -1.0 -2.5 V V = V , I = -250 A GS(th) DS GS D g Forward Transconductance 3.1 S V = -10V, I = -3.0A fs DS D -1.0 V = -24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS ( -5.0 V = -24V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 9.5 14 I = -3.0A g D Q Gate-to-Source Charge 2.3 3.5 nC V = -24V gs DS Q Gate-to-Drain Mille) Charge 1.6 2.4 V = -10V gd GS t Turn-On Delay Time 12 V = -15V d(on) DD t Rise Time 18 I = -1.0A r D t Turn-Off Delay Time 88 R = 6.0 d(off) G t Fall Time 52 V = -10V f GS C Input Capacitance 510 V = 0V iss GS C Output Capacitance 71 pF V = -25V oss DS C Reverse Transfer Capacitance 43 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S %%% %%% 1.3 (Body Diode) showing the I Pulsed Source Current integral reverse G SM %%% 24 %%% (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -1.3A, V = 0V SD J S GS t Reverse Recovery Time 17 26 ns T = 25C, I = -1.3A rr J F Q Reverse Recovery Charge 12 18 nC di/dt = -100A/ s rr Repetitive rating pulse width limited by Surface mounted on FR-4 board, t max. junction temperature. Pulse width 400s duty cycle &