96230 IRLP3034PbF HEXFET Power MOSFET Applications D DC Motor Drive V 40V DSS High Efficiency Synchronous Rectification in SMPS R typ. 1.4m DS(on) Uninterruptible Power Supply max. 1.7m High Speed Power Switching G I 327A Hard Switched and High Frequency Circuits D (Silicon Limited) S I 195A D (Package Limited) Benefits Optimized for Logic Level Drive D Very Low R at 4.5V V DS(ON) GS Superior R*Q at 4.5V V GS S Improved Gate, Avalanche and Dynamic dV/dt D G Ruggedness Fully Characterized Capacitance and Avalanche TO-247AC SOA IRLP3034PbF Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 327 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 232 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS I Pulsed Drain Current 1308 DM P T = 25C 341 W Maximum Power Dissipation D C Linear Derating Factor 2.3 W/C V 20 V GS Gate-to-Source Voltage dv/dt Peak Diode Recovery 4.6 V/ns T J Operating Junction and -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbf in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 224 mJ AS (Thermally limited) Avalanche Current I A AR See Fig. 14, 15, 22a, 22b, Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 0.44 R Case-to-Sink, Flat, Greased Surface 0.24 C/W CS R 40 JA Junction-to-Ambient www.irf.com 1 04/21/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.04 V/C Reference to 25C, I = 5mA (BR)DSS J D 1.4 1.7 V = 10V, I = 195A GS D R Static Drain-to-Source On-Resistance m DS(on) 1.6 2.0 V = 4.5V, I = 172A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 40V, V = 0V DSS DS GS A 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.1 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 286 S V = 10V, I = 195A DS D Q Total Gate Charge 108 162 I = 185A g D Q Gate-to-Source Charge 29 V = 20V gs DS nC Q Gate-to-Drain Mille) Charge 54 V = 4.5V gd GS Q Total Gate Charge Sync. (Q - Q ) 54 I = 185A, V =0V, V = 4.5V sync g gd D DS GS t Turn-On Delay Time 65 V = 26V d(on) DD t Rise Time 827 I = 195A r D ns t Turn-Off Delay Time 97 R = 2.1 d(off) G t Fall Time 355 V = 4.5V f GS C Input Capacitance 10315 V = 0V iss GS C Output Capacitance 1980 V = 25V oss DS C Reverse Transfer Capacitance 935 pF = 1.0MHz rss C eff. (ER) 2378 V = 0V, V = 0V to 32V Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 2986 V = 0V, V = 0V to 32V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 327 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1308 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 195A, V = 0V SD J S GS t T = 25C V = 34V, Reverse Recovery Time 39 rr J R ns T = 125C I = 195A 41 J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 39 rr J nC 46 T = 125C J I T = 25C Reverse Recovery Current 1.7 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Pulse width 400s duty cycle 2%. Calcuted continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time temperature Bond wire current limit is 195A. Note that current oss limitation arising from heating of the device leds may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. Limited by T , starting T = 25C, L = 0.013mH Jmax J R = 25, I = 195A, V =10V. Part not recommended for use GS G AS above this value . I 195A, di/dt 841A/s, V V , T 175C. SD DD (BR)DSS J 2 www.irf.com