PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V = 80V DSS Dynamic dv/dt Rating 175C Operating Temperature R = 28m DS(on) Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free I = 30A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, low RJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is I-Pak D-Pak for through-hole mounting applications. Power dissipation levels up to 1.5 IRLU2908PbF IRLR2908PbF watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C GS 39 A D C Continuous Drain Current, V 10V (See Fig. 9) I T = 100C GS 28 D C Continuous Drain Current, V 10V (Package Limited) I T = 25C GS 30 D C Pulsed Drain Current I 150 DM P T = 25C Maximum Power Dissipation 120 W C D Linear Derating Factor 0.77 W/C V Gate-to-Source Voltage 16 V GS E 180 mJ AS Single Pulse Avalanche Energy (Thermally Limited) E (tested) Single Pulse Avalanche Energy Tested Value 250 AS Avalanche Current I AR See Fig.12a,12b,15,16 A Repetitive Avalanche Energy E AR mJ Peak Diode Recovery dv/dt dv/dt 2.3 V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.3 C/W JC Junction-to-Ambient (PCB Mount) R 40 JA R Junction-to-Ambient 110 JA www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 80 V V = 0V, I = 250A (BR)DSS GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.085 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 22.5 28 m V = 10V, I = 23A GS D 25 30 V = 4.5V, I = 20A GS D V GS(th) Gate Threshold Voltage 1.0 2.5 V V = V , I = 250A DS GS D gfs Forward Transconductance 35 S V = 25V, I = 23A DS D I Drain-to-Source Leakage Current 20 A V = 80V, V = 0V DSS DS GS 250 V = 80V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 16V GS Gate-to-Source Reverse Leakage -200 V = -16V GS Q g Total Gate Charge 22 33 nC I = 23A D Q Gate-to-Source Charge 6.0 9.1 V = 64V gs DS Q Gate-to-Drain Mille) Charge 11 17 V = 4.5V gd GS t Turn-On Delay Time 12 ns V = 40V d(on) DD t r Rise Time 95 I = 23A D t d(off) Turn-Off Delay Time 36 R = 8.3 G t f Fall Time 55 V = 4.5V GS L Internal Drain Inductance 4.5 nH Between lead, D D 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C iss Input Capacitance 1890 pF V = 0V GS C oss Output Capacitance 260 V = 25V DS C Reverse Transfer Capacitance 35 = 1.0MHz, See Fig. 5 rss C Output Capacitance 1920 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 170 V = 0V, V = 64V, = 1.0MHz oss GS DS C eff. oss Effective Output Capacitance 310 V = 0V, V = 0V to 64V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current 39 MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 150 integral reverse SM S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.3 V T = 25C, I = 23A, V = 0V J S GS t rr Reverse Recovery Time 75 110 ns T = 25C, I = 23A, V = 25V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 210 310 nC t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Notes through are on page 11 HEXFET is a registered trademark of International Rectifier. 2 www.irf.com