X-On Electronics has gained recognition as a prominent supplier of IRLR3105TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLR3105TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLR3105TRPBF Infineon

IRLR3105TRPBF electronic component of Infineon
IRLR3105TRPBF Infineon
IRLR3105TRPBF MOSFETs
IRLR3105TRPBF  Semiconductors

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See Product Specifications
Part No. IRLR3105TRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Datasheet: IRLR3105TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.4625 ea
Line Total: USD 925 
Availability - 1940
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
446
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 355
Multiples : 1
355 : USD 0.7324
359 : USD 0.7245
363 : USD 0.7166
367 : USD 0.7086
372 : USD 0.7006

13580
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 375
Multiples : 1
375 : USD 0.6937
392 : USD 0.664
426 : USD 0.6105
500 : USD 0.523
1000 : USD 0.4828
2000 : USD 0.4498

1940
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 2000
Multiples : 2000
2000 : USD 0.4625
4000 : USD 0.4562
6000 : USD 0.45
8000 : USD 0.45
10000 : USD 0.4438

21881
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 0.8538
10 : USD 0.7776
100 : USD 0.6237
500 : USD 0.4862
1000 : USD 0.4829
2000 : USD 0.4631

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the IRLR3105TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLR3105TRPBF and other electronic components in the MOSFETs category and beyond.

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PD - 95553B IRLR3105PbF IRLU3105PbF HEXFET Power MOSFET Features Logic-Level Gate Drive D Advanced Process Technology V = 55V DSS Ultra Low On-Resistance 175C Operating Temperature Fast Switching R = 0.037 DS(on) G Repetitive Avalanche Allowed up to Tjmax Lead-Free I = 25A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, D-Pak I-Pak infrared, or wave soldering techniques. The straight lead version IRLR3105PbF IRLU3105PbF (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 25 D C GS I T = 100C Continuous Drain Current, V 10V 18 A D C GS I Pulsed Drain Current 100 DM P T = 25C Power Dissipation 57 W D C Linear Derating Factor 0.38 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 61 mJ AS E (tested) Single Pulse Avalanche Energy Tested Value 94 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 3.4 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.65 JC R Junction-to-Ambient (PCB mount)* 50 C/W JA R Junction-to-Ambient 110 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.056 V/C Reference to 25C, I = 1mA (BR)DSS J D 30 37 V = 10V, I = 15A GS D m R Static Drain-to-Source On-Resistance DS(on) 35 43 V = 5.0V, I = 13A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 15 S V = 25V, I = 15A fs DS D 20 V = 55V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 16V GS nA Gate-to-Source Reverse Leakage -200 V = -16V GS Q Total Gate Charge 20 I = 15A g D Q Gate-to-Source Charge 5.6 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 9.0 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 8.0 V = 28V d(on) DD t Rise Time 57 I = 15A r D t Turn-Off Delay Time 25 R = 24 d(off) G t Fall Time 37 V = 5.0V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 710 V = 0V iss GS C Output Capacitance 150 V = 25V oss DS C Reverse Transfer Capacitance 28 pF = 1.0MHz, See Fig. 5 rss C Output Capacitance 890 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 110 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 210 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 25 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 100 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 15A, V = 0V SD J S GS t Reverse Recovery Time 52 78 ns T = 25C, I = 15A, V = 28V rr J F DD Q Reverse RecoveryCharge 82 120 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D When mounted on 1 square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note AN-994 Notes through are on page 11 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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