IRLR3715ZPbF IRLU3715ZPbF HEXFET Power MOSFET Applications V R max Qg DSS DS(on) High Frequency Synchronous Buck Converters for Computer Processor Power 11m 20V 7.2nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits D-Pak I-Pak Ultra-Low Gate Impedance IRLR3715Z IRLU3715Z Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 20 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 49 GS A D C I T = 100C Continuous Drain Current, V 10V 35 GS D C Pulsed Drain Current I 200 DM P T = 25C Maximum Power Dissipation 40 W D C P T = 100C Maximum Power Dissipation 20 D C Linear Derating Factor 0.27 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 3.75 C/W Junction-to-Ambient (PCB Mount) R JA 50 R JA Junction-to-Ambient 110 Notes through are on page 11 www.irf.com 1 12/7/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 13 mV/C Reference to 25C, I = 1mA DSS J D R m DS(on) Static Drain-to-Source On-Resistance 8.8 11 V = 10V, I = 15A GS D 12.4 15.5 V = 4.5V, I = 12A GS D V GS(th) Gate Threshold Voltage 1.65 2.1 2.55 V V = V , I = 250A DS GS D /T V Gate Threshold Voltage Coefficient -4.8 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 33 S V = 10V, I = 12A DS D Q Total Gate Charge 7.2 11 g Q Pre-Vth Gate-to-Source Charge 2.3 V = 10V gs1 DS Q Post-Vth Gate-to-Source Charge 0.90 nC V = 4.5V gs2 GS Q gd Gate-to-Drain Charge 2.6 I = 12A D Q godr Gate Charge Overdrive 1.4 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 3.5 Q oss Output Charge 3.8 nC V = 10V, V = 0V DS GS t Turn-On Delay Time 7.8 V = 10V, V = 4.5V d(on) DD GS t Rise Time 13 I = 12A r D t d(off) Turn-Off Delay Time 10 ns Clamped Inductive Load t f Fall Time 4.3 C iss Input Capacitance 810 V = 0V GS C oss Output Capacitance 270 pF V = 10V DS C rss Reverse Transfer Capacitance 150 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 19 mJ Avalanche Current I AR 12 A Repetitive Avalanche Energy E AR 4.0 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 49 I D S Continuous Source Current MOSFET symbol (Body Diode) A showing the G I SM Pulsed Source Current 200 integral reverse S p-n junction diode. (Body Diode) V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t Reverse Recovery Time 11 17 ns T = 25C, I = 12A, V = 10V rr J F DD Q di/dt = 100A/s rr Reverse Recovery Charge 3.5 5.3 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com