IRLR7807ZPbF IRLU7807ZPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck V R max Qg (typ.) Converters for Computer Processor Power DSS DS(on) Lead-Free 13.8m 30V 7.0nC Benefits Very Low RDS(on) at 4.5V V GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IRLR7807Z IRLU7807Z Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 43 I T = 25C GS C D Continuous Drain Current, V 10V 30 I T = 100C A C GS D Pulsed Drain Current I 170 DM Maximum Power Dissipation P T = 25C 40 W C D Maximum Power Dissipation P T = 100C 20 C D Linear Derating Factor 0.27 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.75 JC Junction-to-Ambient (PCB Mount) R 50 C/W JA R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 12/8/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 23 mV/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 11 13.8 V = 10V, I = 15A GS D 14.5 18.2 V = 4.5V, I = 12A GS D V GS(th) Gate Threshold Voltage 1.35 1.8 2.25 V V = V , I = 250A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -4.5 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 51 S V = 15V, I = 12A DS D Q g Total Gate Charge 7.0 11 Q gs1 Pre-Vth Gate-to-Source Charge 1.8 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 0.7 nC V = 4.5V GS Q gd Gate-to-Drain Charge 2.7 I = 12A D Q Gate Charge Overdrive 1.8 See Fig. 16 godr Q Switch Charge (Q + Q ) 3.4 sw gs2 gd Q oss Output Charge 4.0 nC V = 15V, V = 0V DS GS t d(on) Turn-On Delay Time 7.1 V = 15V, V = 4.5V DD GS t r Rise Time 28 I = 12A D t d(off) Turn-Off Delay Time 9.8 ns Clamped Inductive Load t Fall Time 3.5 f C Input Capacitance 780 V = 0V iss GS C Output Capacitance 180 pF V = 15V oss DS C rss Reverse Transfer Capacitance 100 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E mJ AS 28 Avalanche Current I 12 A AR Repetitive Avalanche Energy E AR 4.0 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 43 I S Continuous Source Current MOSFET symbol (Body Diode) A showing the I Pulsed Source Current 170 integral reverse SM (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t rr Reverse Recovery Time 23 35 ns T = 25C, I = 12A, V = 15V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 14 21 nC t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com