IRLR8113PbF IRLU8113PbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck V R max Qg DSS DS(on) Converters for Computer Processor Power 6.0m 30V 22nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits Very Low R (on) at 4.5V V DS GS D-Pak I-Pak Ultra-Low Gate Impedance IRLR8113 IRLU8113 Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 94 I T = 25C C GS D Continuous Drain Current, V 10V 67 I T = 100C A C GS D Pulsed Drain Current I 380 DM P T = 25C C Maximum Power Dissipation 89 W D P T = 100C Maximum Power Dissipation 44 D C Linear Derating Factor 0.59 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10 lbf in (1.1 N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.69 JC Junction-to-Ambient (PCB Mount) R JA 50 C/W R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 12/7/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 21 mV/C Reference to 25C, I = 1mA DSS J D R m DS(on) Static Drain-to-Source On-Resistance 4.8 6.0 V = 10V, I = 15A GS D 5.8 7.4 V = 4.5V, I = 12A GS D V GS(th) Gate Threshold Voltage 1.35 2.25 V V = V , I = 250A DS GS D V /T Gate Threshold Voltage Coefficient -5.6 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 175C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 74 S V = 15V, I = 12A DS D Q Total Gate Charge 22 32 g Q Pre-Vth Gate-to-Source Charge 6.1 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.7 nC V = 4.5V gs2 GS Q gd Gate-to-Drain Charge 6.8 I = 12A D Q godr Gate Charge Overdrive 7.4 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 8.5 Q Output Charge 14 nC = 16V, V = 0V oss V DS GS t Turn-On Delay Time 9.2 V = 15V, V = 4.5V d(on) DD GS t Rise Time 3.8 I = 12A r D t d(off) Turn-Off Delay Time 15 ns Clamped Inductive Load t f Fall Time 10 C iss Input Capacitance 2920 V = 0V GS C oss Output Capacitance 610 pF V = 15V DS C Reverse Transfer Capacitance 260 rss = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 145 mJ Avalanche Current I AR 13 A Repetitive Avalanche Energy E AR 8.9 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 94 D I S Continuous Source Current MOSFET symbol (Body Diode) A showing the G I SM Pulsed Source Current 380 integral reverse S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V SD J S GS t Reverse Recovery Time 33 49 ns T = 25C, I = 12A, V = 15V rr J F DD Q di/dt = 100A/s rr Reverse Recovery Charge 30 45 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com