IRLR8726PbF IRLU8726PbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck V R max Qg (typ.) DSS DS(on) Converters for Computer Processor Power 30V 5.8m V = 10V 15nC High Frequency Isolated DC-DC GS Converters with Synchronous Rectification D D for Telecom and Industrial Use Benefits S Very Low R at 4.5V V DS(on) GS S D D G Ultra-Low Gate Impedance G Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRLR8726PbF IRLU8726PbF Lead-Free RoHS compliant GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 86 GS D C Continuous Drain Current, V 10V 61 I T = 100C A C GS D Pulsed Drain Current I 340 DM Maximum Power Dissipation P T = 25C W 75 D C Maximum Power Dissipation P T = 100C 38 C D Linear Derating Factor 0.5 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 2.0 JC Junction-to-Ambient (PCB Mount) R 50 C/W JA Junction-to-Ambient R 110 JA Notes through are on page 11 www.irf.com 1 11/23/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 20 mV/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 4.0 5.8 V = 10V, I = 25A DS(on) GS D 5.8 8.0 V = 4.5V, I = 20A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 50A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -8.6 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 73 S V = 15V, I = 20A DS D Q Total Gate Charge 15 23 g Q Pre-Vth Gate-to-Source Charge 3.7 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.9 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 5.7 I = 20A gd D Q Gate Charge Overdrive 3.7 See Fig. 15 godr Q Switch Charge (Q + Q ) 7.6 sw gs2 gd Q Output Charge 10 nC V = 15V, V = 0V oss DS GS R Gate Resistance 2.0 3.5 G t Turn-On Delay Time 12 V = 15V, V = 4.5V d(on) DD GS t Rise Time 49 I = 20A r D R = 1.8 t Turn-Off Delay Time 15 ns G d(off) See Fig. 13 t Fall Time 16 f C Input Capacitance 2150 V = 0V iss GS C Output Capacitance 480 pF V = 15V oss DS C Reverse Transfer Capacitance 205 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 120 mJ AS Avalanche Current I 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions 86 I Continuous Source Current MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 340 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V SD J S GS t rr Reverse Recovery Time 24 36 ns T = 25C, I = 20A, V = 15V DD J F Q Reverse Recovery Charge 52 78 nC di/dt = 300A/s rr 2 www.irf.com