97358 IRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET Applications D DC Motor Drive V 60V DSS High Efficiency Synchronous Rectification in SMPS R typ. 1.9m DS(on) Uninterruptible Power Supply max. 2.4m High Speed Power Switching G I 270A Hard Switched and High Frequency Circuits D (Silicon Limited) S I 195A D (Package Limited) Benefits Optimized for Logic Level Drive Very Low R at 4.5V V DS(ON) GS Superior R*Q at 4.5V V GS Improved Gate, Avalanche and Dynamic dV/dt S S D Ruggedness D G G Fully Characterized Capacitance and Avalanche 2 D Pak TO-262 SOA IRLS3036PbF IRLSL3036PbF Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 270 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 190 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS I 1100 DM Pulsed Drain Current P T = 25C Maximum Power Dissipation 380 W D C 2.5 Linear Derating Factor W/C V Gate-to-Source Voltage 16 V GS 8.0 dv/dt Peak Diode Recovery V/ns T Operating Junction and J -55 to + 175 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 290 mJ AS (Thermally limited) Avalanche Current I A AR See Fig. 14, 15, 22a, 22b Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units 11 R JC Junction-to-Case 0.40 C/W R 40 JA Junction-to-Ambient (PCB Mount, steady state) www.irf.com 1 12/08/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.061 V/C Reference to 25C, I = 5mA (BR)DSS J D 1.9 2.4 V = 10V, I = 165A GS D R Static Drain-to-Source On-Resistance m DS(on) 2.2 2.8 V = 4.5V, I = 140A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS R Internal Gate Resistance 2.0 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 340 S V = 10V, I = 165A DS D Q Total Gate Charge 91 140 I = 165A g D Q Gate-to-Source Charge 31 V = 30V gs DS nC Q Gate-to-Drain Mille) Charge 51 V = 4.5V gd GS Q Total Gate Charge Sync. (Q - Q ) 40 I = 165A, V =0V, V = 4.5V sync g gd D DS GS t Turn-On Delay Time 66 V = 39V d(on) DD t Rise Time 220 I = 165A r D ns t Turn-Off Delay Time 110 R = 2.1 d(off) G t Fall Time 110 V = 4.5V f GS C Input Capacitance 11210 V = 0V iss GS C Output Capacitance 1020 V = 50V oss DS C Reverse Transfer Capacitance 500 pF = 1.0MHz rss C eff. (ER) 1430 V = 0V, V = 0V to 48V Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 1880 V = 0V, V = 0V to 48V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 270 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1100 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 165A, V = 0V SD J S GS t Reverse Recovery Time 62 T = 25C V = 51V, rr J R ns T = 125C I = 165A 66 J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 310 rr J nC 360 T = 125C J I Reverse Recovery Current 4.4 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calcuted continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time as oss temperature Bond wire current limit is 195A. Note that current C while V is rising from 0 to 80% V . oss DS DSS limitation arising from heating of the device leds may occur with C eff. (ER) is a fixed capacitance that gives the same energy as oss some lead mounting arrangements. C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction When mounted on 1 square PCB (FR-4 or G-10 Material). For temperature. recommended footprint and soldering techniquea refer to applocation Limited by T , starting T = 25C, L = 0.021mH Jmax J note AN- 994 echniques refer to application note AN-994. R = 25 , I = 165A, V =10V. Part not recommended for use GS G AS above this value . I 165A, di/dt 430A/s, V V , T 175C. SD DD (BR)DSS J % 11 Pulse width 400s duty cycle 2%. % & 2 www.irf.com