IRLS3813PbF HEXFET Power MOSFET Application V 30V Brushed motor drive applications DSS D BLDC motor drive applications R 1.60m DS(on) typ. Battery powered circuits 1.95m max G Half-bridge and full-bridge topologies I 247A D (Silicon Limited) Synchronous rectifier applications S I 160A D (Package Limited) Resonant mode power supplies OR-ing and redundant power switches D DC/DC and AC/DC converters DC/AC inverters S G Benefits Fully Characterized Capacitance and Avalanche SOA D2Pak Enhanced body diode dV/dt and dI/dt Capability IRLS3813PbF Lead-Free, RoHS Compliant G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 50 IRLS3813PbF 2 IRLS3813PbF D -Pak Tape and Reel Left 800 IRLS3813TRLPbF Absolute Maximum Rating Symbol Parameter Max. Units V Drain-to-Source Voltage 30 V DS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 247 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 156 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 160 D C GS I Pulsed Drain Current 850 DM P T = 25C Maximum Power Dissipation 195 W D C Linear Derating Factor 1.6 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Symbol Parameter Max. Units E 177 mJ Single Pulse Avalanche Energy AS (Thermally limited) I Avalanche Current 148 A AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 0.64 JC C/W Junction-to-Ambient (PCB Mount) R 40 JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback January 23, 2014 IRLS3813PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 23 mV/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.60 1.95 V = 10V, I = 148A DS(on) m GS D V Gate Threshold Voltage 1.35 2.35 V V = V , I = 150A GS(th) DS GS D 1 V =30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 100 V =30V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 0.9 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J gfs Forward Transconductance 428 S V = 10V, I =148A DS D Q Total Gate Charge 55 83 I = 148A g D Q Gate-to-Source Charge 28 nC V = 15V gs DS Q Gate-to-Drain Charge 11 V = 4.5V gd GS t Turn-On Delay Time 32 V = 20V d(on) DD t Rise Time 202 I = 148A r D ns t Turn-Off Delay Time 33 R = 4.5 d(off) G t Fall Time 102 V = 4.5V f GS C Input Capacitance 8020 V = 0V iss GS C Output Capacitance 1250 V = 25V oss DS C Reverse Transfer Capacitance 570 = 1.0MHz rss pF C Effective Output Capacitance (Energy Related) 1560 V = 0V, VDS = 0V to 24V oss eff.(ER) GS C Output Capacitance (Time Related) 1750 V = 0V, VDS = 0V to 24V oss eff.(TR) GS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 247 S (Body Diode) showing the A Pulsed Source Current integral reverse I 850 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 148A,V = 0V SD J S GS dv/dt Peak Diode Recovery dv/dt 2.2 V/ns T = 150C,I =148A,V = 30V J S DS 32 T = 25C V = 26V J DD t Reverse Recovery Time ns rr 33 T = 125C I = 148A, J F 24 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 26 T = 125C J I Reverse Recovery Current 1.2 A T = 25C RRM J Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 16H, R = 50 , I = 148A, V =10V. Jmax J G AS GS I 148A, di/dt 865A/s, V V , T 150C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: