IRLR3714Z IRLU3714Z HEXFET Power MOSFET Applications V R max Qg DSS DS(on) High Frequency Synchronous Buck Converters for Computer Processor Power 20V 15m 4.7nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits Very Low RDS(on) at 4.5V V GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRLR3714Z IRLU3714Z Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 20 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 37 GS D C I T = 100C Continuous Drain Current, V 10V GS 26 A D C Pulsed Drain Current I 144 DM Maximum Power Dissipation P T = 25C 35 W C D Maximum Power Dissipation P T = 100C 18 D C Linear Derating Factor 0.23 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 4.28 Junction-to-Ambient (PCB Mount) R 50 C/W JA R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 10/7/03 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 14 mV/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 12 15 V = 10V, I = 15A GS D 20 25 V = 4.5V, I = 12A GS D V GS(th) Gate Threshold Voltage 1.65 2.1 2.55 V V = V , I = 250A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -5.2 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 21 S V = 10V, I = 12A DS D Q g Total Gate Charge 4.7 7.1 Q gs1 Pre-Vth Gate-to-Source Charge 1.7 V = 10V DS Q gs2 Post-Vth Gate-to-Source Charge 0.7 nC V = 4.5V GS Q gd Gate-to-Drain Charge 1.7 I = 12A D Q Gate Charge Overdrive 0.6 See Fig. 16 godr Q Switch Charge (Q + Q ) 2.4 sw gs2 gd Q oss Output Charge 2.6 nC V = 10V, V = 0V DS GS t d(on) Turn-On Delay Time 5.4 V = 15V, V = 4.5V DD GS t r Rise Time 7.6 I = 12A D t d(off) Turn-Off Delay Time 9.2 ns Clamped Inductive Load t Fall Time 4.3 f C Input Capacitance 560 V = 0V iss GS C Output Capacitance 180 pF V = 10V oss DS C rss Reverse Transfer Capacitance 95 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E mJ AS 31 Avalanche Current I 12 A AR Repetitive Avalanche Energy E AR 3.5 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 37 I S Continuous Source Current MOSFET symbol (Body Diode) A showing the I Pulsed Source Current 144 integral reverse SM (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t rr Reverse Recovery Time 21 32 ns T = 25C, I = 12A, V = 10V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 8.5 13 nC t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com