HEXFET Power MOSFET Applications V R max Qg DSS DS(on) High Frequency Synchronous Buck Converters for Computer Processor Power 30V 8.4m 8.5nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits D-Pak Very Low RDS(on) at 4.5V V I-Pak GS IRLR8721PbF IRLU8721PbF Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage GD S and Current Gate Drain Source Base Part Number Package Type Standard Pack Orderable part number Form Quantity IRLR8721PbF D-Pak Tube 75 IRLR8721PbF Tape and Reel 2000 IRLR8721TRPbF Tape and Reel Left 3000 IRLR8721TRLPbF Tape and Reel Right 3000 IRLR8721TRRPbF IRLU8721PbF I-Pak Tube 75 IRLU8721PbF Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 65 I T = 25C C GS D I T = 100C Continuous Drain Current, V 10V 46 GS A D C Pulsed Drain Current I 260 DM P T = 25C Maximum Power Dissipation 65 D C W P T = 100C Maximum Power Dissipation 33 D C Linear Derating Factor 0.43 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.3 JC Junction-to-Ambient (PCB Mount) R JA 50 C/W R JA Junction-to-Ambient 110 Notes through are on page 11 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250 A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 21 mV/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 6.3 8.4 V = 10V, I = 25A GS D 10.1 11.8 V = 4.5V, I = 20A GS D V GS(th) Gate Threshold Voltage 1.35 1.9 2.35 V V = V , I = 25 A DS GS D V Gate Threshold Voltage Coefficient -6.8 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 46 S V = 15V, I = 20A DS D Q g Total Gate Charge 8.5 13 Q gs1 Pre-Vth Gate-to-Source Charge 1.9 V = 15V DS Q Post-Vth Gate-to-Source Charge 1.2 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 3.4 I = 20A gd D Q Gate Charge Overdrive 2.0 See Fig. 16 godr Q Switch Charge (Q + Q ) sw gs2 gd 4.6 Q oss Output Charge 7.9 nC V = 16V, V = 0V DS GS R G Gate Resistance 2.3 3.8 t d(on) Turn-On Delay Time 8.8 V = 15V, V = 4.5V DD GS t r Rise Time 30 I = 20A D t d(off) Turn-Off Delay Time 9.4 ns R = 1.8 G t f Fall Time 6.5 See Fig. 14 C Input Capacitance 1030 V = 0V iss GS C Output Capacitance 350 pF = 15V oss V DS C Reverse Transfer Capacitance 110 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 93 mJ Avalanche Current I AR 20 A Repetitive Avalanche Energy E AR 6.5 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 65 I Continuous Source Current A MOSFET symbol D S (Body Diode) showing the I Pulsed Source Current 260 integral reverse G SM S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 20A, V = 0V J S GS t rr Reverse Recovery Time 17 26 ns T = 25C, I = 20A, V = 15V DD J F Q di/dt = 300A/s rr Reverse Recovery Charge 24 36 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)