PD - 93983A REPETITIVE AVALANCHE AND dv/dt RATED IRFE120 HEXFET TRANSISTORS JANTX2N6788U SURFACE MOUNT (LCC-18) REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE120 100V 0.30 4.5A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features: mount technology. Desinged to be a close replacement Surface Mount for the TO-39 package, the LCC will give designers the Small Footprint extra flexibility they need to increase circuit board density. Alternative to TO-39 Package International Rectifier has engineered the LCC package Hermetically Sealed to meet the specific needs of the power market by Dynamic dv/dt Rating increasing the size of the bottom source pad, thereby Avalanche Energy Rating enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce Simple Drive Requirements RF interference. Light Weight Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 4.5 D GS C A I V = 10V, T = 100C Continuous Drain Current 2.8 D GS C I Pulsed Drain Current 18 DM P T = 25C Max. Power Dissipation 14 W D C Linear Derating Factor 0.11 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 0.242 mJ AS I Avalanche Current 2.2 A AR E Repetitive Avalanche Energy 1.4 mJ AR dv/dt Peak Diode Recovery dv/dt 5.5 V/ns T Operating Junction -55 to 150 J T Storage Temperature Range C STG Pckg. Mounting Surface Temp. 300 (for 5s) Weight 0.42(typical) g For footnotes refer to the last page www.irf.com 1 IRFE120, JANTX2N6788U Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 0.10 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.30 V = 10V, I = 2.8A DS(on) GS D Resistance 0.35 V = 10V, I = 4.5A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 1.5 S V > 15V, I = 2.8A fs DS DS I Zero Gate Voltage Drain Current 25 V = 80V, V = 0V DSS DS GS A 250 V = 80V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 18 V = 10V, I = 4.5A g GS D Q Gate-to-Source Charge 4.0 nC V = 50V gs DS Q Gate-to-Drain (Miller) Charge 9.0 gd t Turn-On Delay Time 40 V = 35V, I = 4.5A d(on) DD D t Rise Time 70 V = 10V, R = 7.5 r GS G ns t Turn-Off Delay Time 40 d(off) t Fall Time 70 f L L Total Inductance 6.1 S + D nH Measured from the center of drain pad to center of source pad C Input Capacitance 350 V = 0V, V = 25V iss GS DS C Output Capacitance 150 pF f = 1.0MHz oss C Reverse Transfer Capacitance 24 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 4.5 S A I Pulse Source Current (Body Diode) 18 SM V Diode Forward Voltage 1.8 V Tj = 25C, I = 4.5A, V = 0V SD S GS t Reverse Recovery Time 240 ns Tj = 25C, I = 4.5A, di/dt 100A/s rr F Q Reverse Recovery Charge 2.0 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction to Case 8.93 thJC C/W R Junction to PC Board 26 Soldered to a copper clad PC board thJ-PCB Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com