SPA02N80C3 TM CoolMOS Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R T = 25C 2.7 DS(on)max j Extreme dv/dt rated Q 12 nC g,typ High peak current capability 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully isolated package (2500 VAC 1 minute) TM CoolMOS 800V designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward) Type Package Marking SPA02N80C3 PG-TO220-3 02N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I T =25C 2 A Continuous drain current D C 1.2 T =100C C 3) 6 I T =25C Pulsed drain current D,pulse C E I =1A, V =50V Avalanche energy, single pulse 90 mJ AS D DD 3),4) E I =2A, V =50V 0.05 Avalanche energy, repetitive t AR D DD AR 3),4) I 2 A Avalanche current, repetitive t AR AR V =0640V MOSFET dv /dt ruggedness dv /dt 50 V/ns DS V 20 Gate source voltage static V GS AC (f >1 Hz) 30 Power dissipation P T =25C 30.5 W tot C T , T -55 ... 150 Operating and storage temperature C j stg Mounting torque M2.5 screws 50 Ncm Rev. 2.91 page 1 2011-09-28SPA02N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous diode forward current 2 A S T =25C C 3) I 6 Diode pulse current S,pulse 5) dv /dt 4 V/ns Reverse diode dv /dt Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 4.1 K/W thJC Thermal resistance, junction - R leaded - - 80 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wave soldering only allowed at leads from case for 10s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =250A 800 - - V (BR)DSS GS D V V =0V, I =2A Avalanche breakdown voltage - 870 - (BR)DS GS D V V =V , I =0.12mA Gate threshold voltage 2.1 3 3.9 GS(th) DS GS D V =800V, V =0V, DS GS I Zero gate voltage drain current - - 5 A DSS T =25C j V =800V, V =0V, DS GS - 25 - T =150C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS V =10V, I =1.2A, GS D R Drain-source on-state resistance - 2.4 2.7 DS(on) T =25C j V =10V, I =12A, GS D - 6.5 - T =150C j R Gate resistance f =1MHz, open drain - 1.2 - G Rev. 2.91 page 2 2011-09-28