SPB16N50C3 Cool MOS Power Transistor V T 560 V DS jmax Feature R 0.28 DS(on) New revolutionary high voltage technology I 16 A D Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB16N50C3 PG-TO263 Q67040-S4642 16N50C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current I A D T = 25 C 16 C T = 100 C 10 C Pulsed drain current, t limited by T I 48 A p jmax D puls Avalanche energy, single pulse E 460 mJ AS I =8, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.64 AR AR jmax I =16A, V =50V D DD Avalanche current, repetitive t limited by T I 16 A AR jmax AR Gate source voltage V 20 V GS V Gate source voltage AC (f >1Hz) 30 GS Power dissipation, T = 25C P 160 W C tot Operating and storage temperature T , T -55...+150 CC j stg 6) Reverse diode dv/dt dv/dt 15 V/ns Page 1 Rev. 2.4 2005-11-07SPB16N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 400 V, I = 16 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 0.78 K/W Thermal resistance, junction - case thJC - - 3.7 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP - - 260 C Soldering temperature, reflow soldering, MSL1 T sold 3) 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA - - V Drain-source breakdown voltage 500 (BR)DSS GS D V =0V, I =16A - 600 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =675A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =500V, V =0V, A Zero gate voltage drain current I DSS DS GS T =25C - 0.1 1 j T =150C - - 100 j V =20V, V =0V - - 100 nA Gate-source leakage current I GSS GS DS V =10V, I =10A Drain-source on-state resistance R DS(on) GS D T =25C - 0.25 0.28 j T =150C - 0.68 - j Gate input resistance R f=1MHz, open drain - 1.5 - G Page 2 Rev. 2.4 2005-11-07