SPU04N60S5 SPD04N60S5 Cool MOS Power Transistor V 600 V DS Feature R 0.95 DS(on) New revolutionary high voltage technology I 4.5 A D Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 04N60S5 SPU04N60S5 PG-TO251 Q67040-S4228 04N60S5 SPD04N60S5 PG-TO252 Q67040-S4202 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current I D T = 25 C 4.5 C T = 100 C 2.8 C 9 Pulsed drain current, t limited by T I p jmax D puls 130 mJ Avalanche energy, single pulse E AS I = 3.4 A, V = 50 V D DD 1) E 0.4 Avalanche energy, repetitive t limited by T AR AR jmax I = 4.5 A, V = 50 V D DD 4.5 A Avalanche current, repetitive t limited by T I AR jmax AR Gate source voltage V V 20 GS Gate source voltage AC (f >1Hz) V 30 GS Power dissipation, T = 25C P 50 W C tot C Operating and storage temperature T , T -55... +150 j stg Page 1 Rev. 2.5 2008-04-08SPU04N60S5 SPD04N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 20 V/ns V = 480 V, I = 4.5 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 2.5 K/W Thermal resistance, junction - case thJC R - - 62 Thermal resistance, junction - ambient, leaded thJA SMD version, device on PCB: R thJA min. footprint - - 62 2 2) 6 cm cooling area - 35 - Soldering temperature, *) T - - 260 C sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 600 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =4.5A - 700 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =200, V =V 3.5 4.5 5.5 Gate threshold voltage V D GS DS GS(th) V =600V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C, - 0.5 1 j T =150C - - 50 j V =20V, V =0V - - 100 nA Gate-source leakage current I GSS GS DS V =10V, I =2.8A, Drain-source on-state resistance R DS(on) GS D T =25C - 0.85 0.95 j T =150C - 2.3 - j R f=1MHz, open Drain - 20 - Gate input resistance G *) TO252: reflow soldering, MSL3 TO251: wavesoldering Page 2 Rev. 2.5 2008-04-08