SPD04N80C3 TM CoolMOS Power Transistor ProductSummary Features V 800 V DS New revolutionaryhigh voltage technology R T =25C 1.3 DS(on)max j Extreme dv/dt rated Q 23 nC g,typ High peak current capability Fully qualified according to JEDEC for Industrial Applications Pb-free lead plating RoHS compliant Halogen free mold compound Ultra low gate charge PG-TO252-3 Ultra low effective capacitances TM CoolMOS 800V designed for: Industrialapplication with high DC bulkvoltage Switching Application (i.e. active clamp forward ) aswd Type Package Marking SPD04N80C3 PG-TO252-3 04N80C3 Maximumratings, at T =25 C, unlessotherwise specified j Value Parameter Symbol Conditions Unit I T =25 C 4 Continuousdrain current A D C 2.5 T =100 C C 2) I T =25 C 12 Pulsed drain current D,pulse C E I =0.8 A, V =50 V Avalanche energy, single pulse 170 mJ AS D DD 2),3) E I =4 A, V =50 V 0.1 Avalanche energy, repetitive t AR D DD AR 2),3) I Avalanche current, repetitive t 4 A AR AR V =0640 V 50 MOSFET dv/dt ruggedness dv/dt V/ns DS Gate source voltage V static 20 V GS AC (f>1Hz) 30 P T =25 C 63 Powerdissipation W tot C T , T -55 ... 150 Operating and storage temperature C j stg Rev. 2.94 page 1 2020-05-10 SPD04N80C3 Maximumratings, at T =25 C, unlessotherwise specified j Parameter Symbol Conditions Value Unit I 4 Continuousdiode forward current A S T =25 C C 2) I 12 Diode pulse current S,pulse 4) dv/dt 4 V/ns Reverse diode dv/dt Parameter Symbol Conditions Values Unit min. typ. max. Thermalcharacteristics R Thermal resistance, junction - case - - 2 K/W thJC SMD version, device R on PCB, minimal - - 62 thJA footprint Thermalresistance, junction - ambient SMD version, device 2 on PCB, 6 cm cooling - 35 - 5) area Soldering temperature, reflow T reflowMSL1 - - 260 C sold soldering Electricalcharacteristics, at T =25 C, unlessotherwise specified j Staticcharacteristics Drain-source breakdown voltage V V =0 V, I =250 A 800 - - V (BR)DSS GS D V V =0 V, I =4 A Avalanche breakdown voltage - 870 - (BR)DS GS D V V =V , I =0.24 mA Gate threshold voltage 2.1 3 3.9 GS(th) DS GS D V =800 V, V =0 V, DS GS I Zero gate voltage drain current - - 10 A DSS T =25 C j V =800 V, V =0 V, DS GS - 50 - T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =2.5 A, GS D R Drain-source on-state resistance - 1.1 1.3 DS(on) T =25 C j V =10 V, I =2.5 A, GS D - 3 - T =150 C j R Gate resistance f=1 MHz, open drain - 1.2 - G Rev. 2.94 page 2 2020-05-10