SPD06N80C3 TM CoolMOS Power Transistor ProductSummary Features V 800 V DS New revolutionaryhigh voltage technology R T =25C 0.9 W DS(on)max j Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Halogen free mold compound Ultra low gate charge PG-TO252-3 Ultra low effective capacitances TM CoolMOS 800V designed for: Industrialapplication withhigh DC bulkvoltage Switching Application (i.e. active clamp forward ) Type Package Marking SPD06N80C3 PG-TO252-3 06N80C3 Maximumratings, at T =25 C, unlessotherwise specified j Parameter Symbol Conditions Value Unit I T =25 C 6 Continuousdrain current A D A 3.8 T =100 C A 2) 18 I T =25 C Pulsed drain current D,pulse A E I =1.2A, V =50 V Avalanche energy, single pulse 230 mJ AS D DD 2),3) E I =6 A, V =50 V 0.2 Avalanche energy, repetitive t AR D DD AR 2),3) I 6 A Avalanche current, repetitive t AR AR V =0640 V 50 MOSFET dv/dt ruggedness dv/dt V/ns DS V 20 Gatesource voltage static V GS AC (f>1Hz) 30 Powerdissipation P T =25 C 83 W tot A T , T -55 ... 150 Operating and storage temperature C j stg Rev. 2.94 page 1 2020-05-10 SPD06N80C3 Maximumratings, at T =25 C, unlessotherwise specified j Parameter Symbol Conditions Value Unit I 6 Continuousdiode forward current A S T =25 C A 2) I 18 Diode pulse current S,pulse 4) dv/dt 4 V/ns Reverse diode dv/dt Values Parameter Symbol Conditions Unit min. typ. max. Thermalcharacteristics R Thermal resistance, junction - case - - 1.5 K/W thJC SMD version, device R on PCB, minimal - - 62 thJA footprint Thermalresistance, junction - ambient SMD version, device 2 on PCB, 6 cm cooling - 35 - 5) area Soldering temperature, reflow T reflowMSL1 - - 260 C sold soldering Electricalcharacteristics, at T =25 C, unlessotherwise specified j Staticcharacteristics V V =0 V, I =250 A Drain-source breakdown voltage 800 - - V (BR)DSS GS D V V =0 V, I =6 A Avalanche breakdown voltage - 870 - (BR)DS GS D Gate threshold voltage V V =V , I =0.25 mA 2.1 3 3.9 GS(th) DS GS D V =800 V, V =0 V, DS GS I Zero gatevoltage drain current - - 10 A DSS T =25 C j V =800 V, V =0 V, DS GS - 50 - T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =3.8A, GS D R Drain-source on-state resistance - 0.78 0.9 W DS(on) T =25 C j V =10 V, I =3.8A, GS D - 2.1 - T =150 C j R f=1 MHz, open drain Gateresistance - 1.2 - W G Rev. 2.94 page 2 2020-05-10