SPD15P10P G SIPMOS Small-Signal-Transistor Product Summary Features V -100 V DS P-Channel R 0.24 DS(on),max Enhancement mode I -15 A D Normal level Avalanche rated PG-TO252-3 Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Type Package Marking Lead free Packing SPP15P10P G PG-TO220-3 15P10P Yes Non dry SPD15P10P G PG-TO252-3 15P10P Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C -15 Continuous drain current A D C T =100 C -10.6 C I T =25 C -60 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =-15 A, R =25 230 mJ AS D GS V 20 Gate source voltage V GS Power dissipation P T =25 C 128 W tot C T , T -55 ... 175 Operating and storage temperature C j stg ESD Class 1C (1kV to 2kV) 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/175/56 Rev 1.8 page 1 2012-09-11 SPD15P10P G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.17 K/W thJC junction - soldering point Thermal resistance, minimal footprint, R -- 75 thJA junction - ambient steady state 2 1) 6 cm cooling area , -- 45 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-1 mA Drain-source breakdown voltage -100 - - V (BR)DSS GS D V =V , I =- DS GS D Gate threshold voltage V -4 -3 -2.1 GS(th) 1.54 mA V =-100 V, V =0 V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25 C j V =-100 V, V =0 V, DS GS - -10 -100 T =150 C j Gate-source leakage current I V =-20 V, V =0 V - -10 -100 nA GSS GS DS V =-10 V, GS R Drain-source on-state resistance - 160 240 m DS(on) I =-10.6 A D V >2 I R , DS D DS(on)max g Transconductance 4.7 9.3 - S fs I =-10.6 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev 1.8 page 2 2012-09-11