SPD30P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage V -60 V DS Enhancement mode Drain-source on-state resistance R 0.075 W DS(on) Avalanche rated Continuous drain current I -30 A D dv/dt rated 175C operating temperature Pin 1 PIN 2/4 PIN 3 G D S Type Package SPD30P06P G PG-TO252-3 Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current I A D T = 25 C -30 C T = 100 C -21.5 C Pulsed drain current I -120 D puls T = 25 C C Avalanche energy, single pulse E 250 mJ AS I = -30 A , V = -25 V, R = 25 W D DD GS Avalanche energy, periodic limited by T E 12.5 jmax AR Reverse diode dv/dt dv/dt 6 kV/s I = -30 A, V = -48 V, di/dt = 200 A/s, S DS T = 175 C jmax Gate source voltage V 20 V GS Power dissipation P 125 W tot T = 25 C C Operating and storage temperature T , T -55...+175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev 2.3 Page 1 2008-09-02SPD30P06P G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R - - 1.2 K/W thJC Thermal resistance, junction - ambient, leaded R - - 100 thJA SMD version, device on PCB: R thJA min. footprint - - 75 2 1) 6 cm cooling area - - 50 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V -60 - - V (BR)DSS V = 0 V, I = -250 A GS D Gate threshold voltage, V = V V -2.1 -3 -4 GS DS GS(th) I = -1.7 mA D Zero gate voltage drain current I A DSS V = -60 V, V = 0 V, T = 25 C - -0.1 -1 DS GS j V = -60 V, V = 0 V, T = 150 C - -10 -100 DS GS j Gate-source leakage current I - -10 -100 nA GSS V = -20 V, V = 0 V GS DS Drain-source on-state resistance R - 0.069 0.075 W DS(on) V = -10 V, I = -21.5 A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.3 Page 2 2008-09-02