SPP06N60C3 TM CoolMOS Power Transistor Product Summary Features V T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO220-3-1 Extreme dv /dt rated Improved transconductance Type Package Ordering Code Marking SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C 6.2 Continuous drain current A D C T =100 C 3.9 C 1) I T =25 C 18.6 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =3.1 A, V =50 V 200 mJ AS D DD 1),2) E I =6.2 A, V =50 V 0.5 Avalanche energy, repetitive t AR D DD AR 1) I 6.2 A Avalanche current, repetitive t AR AR I =6.2 A, V =480 V, D DS Drain source voltage slope dv /dt 50 V/ns T =125 C j Gate source voltage V static 20 V GS V AC (f >1 Hz) 30 GS P T =25 C 74 Power dissipation W tot C T , T Operating and storage temperature -55 ... 150 C j stg Rev. 1.4 page 1 2009-11-27SPP06N60C3 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.7 K/W thJC R leaded - - 62 thJA SMD version, device R on PCB, minimal -- 62 thJA Thermal resistance, junction - footprint ambient SMD version, device 2 on PCB, 6 cm cooling -35- 3) area 1.6 mm (0.063 in.) 4) T - - 260 C Soldering temperature sold from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 600 - - V (BR)DSS GS D V V =0 V, I =6.2 A Avalanche breakdown voltage - 700 - (BR)DS GS D Gate threshold voltage V V =V , I =0.26 mA 2.1 3 3.9 GS(th) DS GS D V =600 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =600 V, V =0 V, DS GS - - 100 T =150 C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =3.9 A, GS D R Drain-source on-state resistance - 0.68 0.75 DS(on) T =25 C j V =10 V, I =3.9 A, GS D - 1.82 - T =150 C j Gate resistance R f =1 MHz, open drain - 1 - G V >2 I R , DS D DS(on)max g Transconductance - 5.6 - S fs I =3.9 A D Rev. 1.4 page 2 2009-11-27