SPP08P06PHXKSA1 Infineon

SPP08P06PHXKSA1 electronic component of Infineon
SPP08P06PHXKSA1 Infineon
SPP08P06PHXKSA1 MOSFETs
SPP08P06PHXKSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SPP08P06PHXKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPP08P06PHXKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SPP08P06PHXKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P-Ch -60V -8.8A TO220-3
Datasheet: SPP08P06PHXKSA1 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.0692
10$ 1.022
100$ 0.6224
500$ 0.5678
1000$ 0.4964
2500$ 0.473
10000$ 0.4665
25000$ 0.4522
50000$ 0.4379
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.4739
3$ 1.8713
8$ 0.8035
63$ 0.5138
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SPP08P06PHXKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPP08P06PHXKSA1 and other electronic components in the MOSFETs category and beyond.

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SPP08P06P H SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage V -60 V DS Enhancement mode Drain-source on-state resistance R 0.3 W DS(on) Avalanche rated Continuous drain current I -8.8 A D dv/dt rated 175C operating temperature Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Pin 1 PIN 2/4 PIN 3 G D S Type Package SPP08P06P H PG-TO220-3 Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current I A D T = 25 C -8.8 C T = 100 C -6.2 C Pulsed drain current I -35.2 D puls T = 25 C C Avalanche energy, single pulse E 70 mJ AS I = -8.8 A , V = -25 V, R = 25 W D DD GS Avalanche energy, periodic limited by T E 4.2 jmax AR Reverse diode dv/dt dv/dt 6 kV/s I = -8.8 A, V = -48 , di/dt = 200 A/s, S DS T = 175 C jmax Gate source voltage V 20 V GS Power dissipation P 42 W tot T = 25 C C Operating and storage temperature T , T -55...+175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev 1.6 Page 1 2011-08-31SPP08P06P H Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R - - 3.6 K/W thJC Thermal resistance, junction - ambient, leaded R - - 62 thJA SMD version, device on PCB: R thJA min. footprint - - 62 2 1) 6 cm cooling area - - 40 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V -60 - - V (BR)DSS V = 0 V, I = -250 A GS D Gate threshold voltage, V = V V -2.1 -3 -4 GS DS GS(th) I = -250 A, T = 25 C D j Zero gate voltage drain current I A DSS V = -60 V, V = 0 V, T = 25 C - -0.1 -1 DS GS j V = -60 V, V = 0 V, T = 150 C - -10 -100 DS GS j Gate-source leakage current I - -10 -100 nA GSS V = -20 V, V = 0 V GS DS Drain-source on-state resistance R - 0.23 0.3 W DS(on) V = -10 V, I = -6.2 A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.6 Page 2 2011-08-31

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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