SPP15N60CFD
TM
CoolMOS Power Transistor
Product Summary
Features
V @ Tjmax 650 V
DS
Intrinsic fast-recovery body diode
R 0.330
DS(on),max
Extremely low reverse recovery charge
I 13.4 A
D
Ultra low gate charge
Extreme dv /dt rated
PG-TO220
High peak current capability
1)
Qualified for industrial grade applications according to JEDEC
CoolMOS CFD designed for:
Softswitching PWM Stages
LCD & CRT TV
Type Package Marking
SPP15N60CFD PG-TO220 15N60CFD
Maximum ratings, at T =25 C, unless otherwise specified
j
Value
Parameter Symbol Conditions Unit
I T =25 C 13.4
Continuous drain current A
D C
T =100 C 8.4
C
2)
I T =25 C 33
Pulsed drain current D,pulse C
E I =6.7 A, V =50 V
Avalanche energy, single pulse 460 mJ
AS D DD
2),3)
E I =13.4 A, V =50 V 0.8
Avalanche energy, repetitive AR D DD
2),3)
I
13.4 A
Avalanche current, repetitive AR
I =13.4 A,
D
Drain source voltage slope dv /dt 80 V/ns
V =480 V, T =125 C
DS j
40
Reverse diode dv /dt dv /dt V/ns
I =13.4 A, V =480 V,
S DS
T =125 C
j
600
Maximum diode commutation speed di /dt A/s
Gate source voltage V static 20 V
GS
30
AC (f >1 Hz)
P T =25 C 156
Power dissipation W
tot C
T , T -55 ... 150
Operating and storage temperature C
j stg
Mounting torque M3 & 3.5 screws 60 Ncm
Rev. 1.3 page 1 2009-11-30SPP15N60CFD
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case R - - 0.8 K/W
thJC
Thermal resistance, junction -
R leaded - - 62
thJA
ambient
Soldering temperature, wave 1.6 mm (0.063 in.)
T
- - 260 C
sold
soldering only allowed at leads from case for 10 s
Electrical characteristics, at T =25 C, unless otherwise specified
j
Static characteristics
Drain-source breakdown voltage V V =0 V, I =250 A 600 - - V
(BR)DSS GS D
Avalanche breakdown voltage V V =0 V, I =13.4 A - 700 -
(BR)DS GS D
V V =V , I =750 A
Gate threshold voltage 3 4 5
GS(th) DS GS D
V =600 V, V =0 V,
DS GS
Zero gate voltage drain current I - 1.4 - A
DSS
T =25 C
j
V =600 V, V =0 V,
DS GS
- 1200 -
T =150 C
j
I V =20 V, V =0 V
Gate-source leakage current - - 100 nA
GSS GS DS
V =10 V, I =9.4 A,
GS D
R
Drain-source on-state resistance - 0.28 0.33
DS(on)
T =25 C
j
V =10 V, I =9.4 A,
GS D
- 0.78 -
T =150 C
j
Gate resistance R f =1 MHz, open drain - 1.3 -
G
|V |>2|I |R ,
DS D DS(on)max
g
Transconductance - 8 - S
fs
I =9.4 A
D
Rev. 1.3 page 2 2009-11-30