SPP18P06P G SIPMOS Power-Transistor Product Summary Features V -60 V DS P-Channel R 0.13 DS(on),max Enhancement mode I -18.7 A D Avalanche rated dv /dt rated PG-TO220-3 175C operating temperature Type Package Tape and reel information Marking Lead free SPP18P06PG PG-TO220-3 50pcs / tube 18P06P Yes Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit steady state I T =25 C -18.7 Continuous drain current A D A T =100 C -13.2 A I T =25 C -74.8 Pulsed drain current D,pulse A Avalanche energy, single pulse E I =18.7 A, R =25 151 mJ AS D GS Avalanche energy, periodic limited by E 8 AR T jmax I =18.7 A, V =48 V, D DS -6 Reverse diode dv /dt dv /dt di /dt =-200 A/s, kV/s T =175 C j,max V 20 Gate source voltage V GS 1) Power dissipation P 81.1 W T =25 C tot A Operating and storage temperature T , T-55 ... +175 C j stg ESD class 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/150/56 Rev1.9 page 1 2010-04-12SPP18P06P G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.85 K/W thJC junction - case Thermal resistance, R -- 62 thJA junction - ambient, leaded R SMD version, device on PCB: minimal footprint - - 62 K/W thJA 2 1) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250 A Drain-source breakdown voltage -60 - - V (BR)DSS GS D V =V , I =- DS GS D Gate threshold voltage V -2.1 2.7 -4 GS(th) 1000 A V =-60 V, V =0 V, DS GS I Zero gate voltage drain current - -0.1 -1 A DSS T =25 C j V =-60 V, V =0 V, DS GS - -10 -100 T =150 C j Gate-source leakage current I V =-20 V, V =0 V - -10 -100 nA GSS GS DS R V =-10 V, I =-13.2 A Drain-source on-state resistance - 102 130 m DS(on) GS D V >2 I R , DS D DS(on)max g Transconductance 510 - S fs I =-13.2 A D 1) 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev1.9 page 2 2010-04-12