SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260C peak reflow 175C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive Avalanche up to V =30V, I =80A, V =10V, R =2.4 DD D GS G T = 175 C jmax dv /dt rated Type Package Ordering Code Marking SPB80N06S-08 PG-TO263-3-2 SP0000-84808 1N0608 T =25C, V =10V C GS SPI80N06S-08 PG-TO262-3-1 SP0000-82518 1N0608 T =100C, V =10V C GS SPP80N06S-08 PG-TO220-3-1 SP0000-84809 1N0608 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 80 A Continuous drain current D C GS T =100C, V =10V 80 C GS 2) I T =25C 320 Pulsed drain current D,pulse C I =80A, R =25, D GS Avalanche energy, single pulse E 700 mJ AS V =25 V DD 2) E T =175 C 30 Avalanche energy, periodic AR j I =80A, V =40V, D DS 2) dv /dt di /dt =200A/s, 6 kV/s Reverse diode dv /dt T =175C j,max V Gate source voltage 20 V GS P T =25C Power dissipation 300 W tot C Operating and storage temperature T , T -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - 0.38 0.5 K/W thJC Thermal resistance, junction - R - - 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 3) - - 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 55 - - V (BR)DSS GS D V V =V , I =240A Gate threshold voltage 2.1 3.0 4 GS(th) DS GS D V =25V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =25V, V =0V, DS GS - 10 100 2) T =150C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =80A - 6.5 8 m DS(on) GS D V =10V, I =80A GS D - 6.2 7.7 SMD version V >2 I R , DS D DS(on)max 2) g - 73 - S Transconductance fs I =80A D footnote on page 3 Rev. 1.0 page 2 2005-06-28