SPW52N50C3 CoolMOS Power Transistor V T 560 V DS jmax Feature R 0.07 DS(on) New revolutionary high voltage technology I 52 A D Worldwide best R in TO-247 DS(on) PG-TO247 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Marking SPW52N50C3 PG-TO247 52N50C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current I A D T = 25 C 52 C T = 100 C 30 C 156 Pulsed drain current, t limited by T I p jmax D puls 1800 mJ Avalanche energy, single pulse E AS I = 10 A, V = 50 V D DD 1) E 1 Avalanche energy, repetitive t limited by T AR AR jmax I = 20 A, V = 50 V D DD 20 A Avalanche current, repetitive t limited by T I AR jmax AR Gate source voltage V V 20 GS V Gate source voltage AC (f >1Hz) 30 GS Power dissipation, T = 25C P 417 W C tot C Operating and storage temperature T , T -55... +150 j stg 4) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.6 Page 1 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-ASPW52N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 400 V, I = 52 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 0.3 K/W Thermal resistance, junction - case thJC R - - 62 Thermal resistance, junction - ambient, leaded thJA Soldering temperature, wavesoldering T - - 260 C sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 500 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =20A - 600 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =2700, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =500V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C, - 0.5 25 j T =150C - - 250 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =30A, Drain-source on-state resistance R GS D DS(on) T =25C - 0.06 0.07 j T =150C - 0.16 - j R f=1MHz, open Drain - 0.7 - Gate input resistance G Rev. 2.6 Page 2 2008-02-11 Please note the new package dimensions arccording to PCN 2009-134-A