Advance Technical Information TM TrenchT2 HiperFET V = 75V FMM150-0075X2F DSS N-Channel Power I = 120A D25 MOSFET R 5.8m DS(on) 33 T1 t = 66ns rr(typ) 5 5 4 4 T2 11 Phase Leg Topology TM ISOPLUS i4-Pak 2 2 Symbol Test Conditions Maximum Ratings T -55 ... +175 C 1 J T 175 C Isolated Tab JM T -55 ... +175 C stg 5 V 50/60H , RMS, t = 1min, Leads-to-Tab 2500 ~V ISOL Z T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features F Mounting Force 20..120 / 4.5..27 N/lb. C z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package Symbol Test Conditions Maximum Ratings - Isolated Mounting Surface V T = 25C to 175C 75 V - 2500V Electrical Isolation DSS J z Avalanche Rated V T = 25C to 175C, R = 1M 75 V DGR J GS z Low Q G V Transient 30 V z GSM Low Drain-to-Tab Capacitance z Low Package Inductance I T = 25C 120 A D25 C I T = 25C, Pulse Width Limited by T 500 A DM C JM Advantages I T = 25C 115 A A C z Easy to Mount E T = 25C 850 mJ AS C z Space Savings dV/dt I I , V V ,T 175C 20 V/ns z S DM DD DSS J High Power Density P T = 25C 170 W D C Applications z DC-DC Converters z Battery Chargers Symbol Test Conditions Characteristic Values z Switched-Mode and Resonant-Mode Min. Typ. Max. Power Supplies z DC Choppers C Coupling Capacitance Between Shorted 40 pF P z AC Motor Drives Pins and Mounting Tab in the Case z Uninterruptible Power Supplies d ,d Pin - Pin 1.7 mm z S A High Speed Power Switching d ,d Pin - Backside Metal 5.5 mm Applications S A Weight 9 g 2009 IXYS CORPORATION, All Rights Reserved DS100186(08/09)FMM150-0075X2F TM Symbol Test Conditions Characteristic Values ISOPLUS i4-Pak Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 75 V DSS GS D V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D I V = 20 V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 150C 250 A J R V = 10V, I = 100A, Note 1 5.8 m DS(on) GS D g V = 10V, I = 60A, Note 1 50 83 S fs DS D C 10.5 nF iss C V = 0V, V = 25 V, f = 1 MHz 1165 pF oss GS DS C 125 pF rss t Resistive Switching Times 23 ns d(on) t V = 10V, V = 0.5 z V , I = 115A 18 ns r GS DS DSS D t R = 2 (External) 33 ns d(off) G t 15 ns f Q 178 nC g(on) Q V = 10V, V = 0.5 z V , I = 100A 37 nC gs GS DS DSS D Q 55 nC gd Ref: IXYS CO 0077 R0 R 0.88 C/W thJC R 0.15 C/W thCS Source-Drain Diode Characteristic Values T = 25C Unless Otherwise Specified) J Symbol Test Conditions Min. Typ. Max. I V = 0V 230 A S GS I Repetitive, Pulse Width Limited by T 900 A SM JM V I = 75A, V = 0V, Note 1 1.5 V SD F GS t 66 ns I = 115A, -di/dt = 100A/s rr F I 4.4 A RM V = 37V, V = 0V R GS Q 145 nC RM Note 1. Pulse test, t 300s, duty cycle, d 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537