X-On Electronics has gained recognition as a prominent supplier of IXBF42N300 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXBF42N300 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXBF42N300 IXYS

IXBF42N300 electronic component of IXYS
IXBF42N300 IXYS
IXBF42N300 MOSFETs
IXBF42N300  Semiconductors

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See Product Specifications
Part No. IXBF42N300
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET IGBT DISC IGBT
Datasheet: IXBF42N300 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 71.0136 ea
Line Total: USD 71.01 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 10 Jul to Mon. 14 Jul
MOQ : 25
Multiples : 25
25 : USD 69.5171

0
Ship by Thu. 10 Jul to Mon. 14 Jul
MOQ : 1
Multiples : 1
1 : USD 71.0136
25 : USD 69.7914

   
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We are delighted to provide the IXBF42N300 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXBF42N300 and other electronic components in the MOSFETs category and beyond.

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The IXBF42N300 is an IGBT (Insulated Gate Bipolar Transistor) Disc IGBT manufactured by IXYS. This IGBT is optimized for fast switching performance, low on resistance, and carries a maximum Collector-Emitter voltage (VCE) of 600 volts. It is rated for an operating temperature range of -40°C to +125°C, and has a maximum power dissipation of 110 watts. The IXBF42N300 also features a package outline of D2-PAK.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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