Preliminary Technical Information TM TM IXFA5N100P V = 1000V Polar HiPerFET DSS IXFP5N100P I = 5A Power MOSFET D25 IXFH5N100P R 2.8 DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) G Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 1000 V D (Tab) DSS J V T = 25 C to 150 C, R = 1M 1000 V TO-220 DGR J GS (IXFP) V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C5A D25 C G D I T = 25 C, Pulse Width Limited by T 10 A DM C JM S D (Tab) I T = 25 C5A TO-247 A C (IXFH) E T = 25 C 300 mJ AS C dV/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 250 W D C G D D (Tab) S T -55 ... +150 C J T 150 C JM G = Gate D = Drain T -55 ... +150 C S = Source Tab = Drain stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d International Standard Packages Weight TO-263 2.5 g Low Q G TO-220 3.0 g Avalanche Rated TO-247 6.0 g Low Package Inductance Fast Intrinsic Rectifier Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 1000 V DSS GS D Applications V V = V , I = 250A 3.0 6.0 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode Power Supplies I V = V , V = 0V 10 A DSS DS DSS GS AC and DC Motor Drives T = 125C 750 A J Discharge Circiuts in Lasers, Spark Igniters, RF Generators R V = 10V, I = 0.5 I , Note 1 2.8 DS(on) GS D D25 High Voltage Pulse Power Applications 2018 IXYS CORPORATION, All rights reserved DS99923A(11/18)IXFA5N100P IXFP5N100P IXFH5N100P Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 2.4 4.0 S fs DS D D25 R Gate input resistance 1.6 Gi C 1830 pF iss C V = 0V, V = 25V, f = 1MHz 113 pF oss GS DS C 20 pF rss t 12 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 30 ns d(off) R = 5 (External) G t 37 ns f Q 33.4 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 10.6 nC gs GS DS DSS D D25 Q 14.4 nC gd R 0.50 C/W thJC R (TO-220) 0.50 C/W thCS R (TO-247) 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 5 A S GS I Repetitive, Pulse Width Limited by T 20 A SM JM V I = I , V = 0V, Note 1 1.3 V SD F S GS t 200 ns I = 5A, V = 0V rr F GS -di/dt = 100A/ s I 7.4 A RM V = 100V R Q 0.43 C RM Note 1: Pulse test, t 300 s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537