IXFA90N20X3 IXYS

IXFA90N20X3 electronic component of IXYS
IXFA90N20X3 IXYS
IXFA90N20X3 MOSFETs
IXFA90N20X3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFA90N20X3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFA90N20X3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFA90N20X3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChUltrJnctn X3Class TO-263D2
Datasheet: IXFA90N20X3 Datasheet (PDF)
Price (USD)
1: USD 8.596 ea
Line Total: USD 8.6 
Availability - 33
  
Ship by Tue. 29 Jul to Thu. 31 Jul
QtyUnit Price
1$ 8.596
3$ 8.078

Availability 33
Ship by Tue. 29 Jul to Thu. 31 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 8.596
3$ 8.078

   
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RoHS - XON
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We are delighted to provide the IXFA90N20X3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFA90N20X3 and other electronic components in the MOSFETs category and beyond.

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The IXFA90N20X3 is an N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by IXYS. It is a power component housed in a TO-263D2 package and is designed for high current and blocking voltage applications.This component is designed to provide ultimate power efficiency with a drain-source breakdown voltage (BVdss) of 90 volts, 20A of continuous drain current (ID), and an on-state resistance (RDS) of 0.04 ohms. Its low gate charge (Qg) and gate-drain charge (Qgd) at full VGS make it an ideal component for high speed switching applications, while its high frequency and safe operating area (SOA) characteristics make it suitable for high current heavy load switching applications. This MOSFET provides superior power efficiency in a wide variety of applications, including AC-DC and DC-DC converters, motor control, and other industrial and consumer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
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Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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