TM TM Polar2 HiPerFET V = 500V IXFB120N50P2 DSS I = 120A Power MOSFET D25 R 43m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM PLUS264 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J G D V T = 25C to 150C, R = 1M 500 V S DGR J GS Tab V Continuous 30 V GSS V Transient 40 V G = Gate D = Drain GSM S = Source Tab = Drain I T = 25C 120 A D25 C I T = 25C, Pulse Width Limited by T 300 A DM C JM I T = 25C 120 A A C E T = 25C4J AS C dv/dt I I , V V ,T 150C 20 V/ns S DM DD DSS J Features P T = 25C 1890 W D C z Fast Intrinsic Diode T -55 ... +150 C J z Dynamic dv/dt Rating z T 150 C Avalanche Rated JM z Low R and Q DS(ON) G T -55 ... +150 C stg z Low Package Inductance T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Advantages F Mounting Force 30..120/6.7..27 N/lb. C z High Power Density Weight 10 g z Easy to Mount z Space Savings Applications z Switch-Mode and Resonant-Mode Power Supplies Symbol Test Conditions Characteristic Values z DC-DC Converters (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Battery Chargers z Uninterrupted Power Supplies BV V = 0V, I = 3mA 500 V DSS GS D z AC and DC Motor Drives z V V = V , I = 8mA 3.0 5.0 V High Speed Power Switching GS(th) DS GS D Application I V = 30V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 2.5 mA J R V = 10V, I = 0.5 I , Note 1 43 m DS(on) GS D D25 2011 IXYS CORPORATION, All Rights Reserved DS100247B(9/11) IXFB120N50P2 Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 65 105 S fs DS D D25 C 19 nF iss C V = 0V, V = 25V, f = 1MHz 1860 pF oss GS DS C 40 pF rss R Gate Input Resistance 0.83 Gi t 43 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 80 ns d(off) R = 1 (External) G t 12 ns f Q 300 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 96 nC gs GS DS DSS D D25 Q 94 nC gd R 0.066 C/W thJC R 0.130 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 120 A S GS I Repetitive, Pulse Width Limited by T 480 A SM JM V I = 100A, V = 0V, Note 1 1.5 V SD F GS t 300 ns rr I = 0.5 I , V = 0V F D25 GS Q 2.0 C -di/dt = 100A/s RM V = 70V R I 16.4 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537