TM TM Polar HiPerFET V = 1200V IXFB30N120P DSS I = 30A Power MOSFET D25 R 350m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode TM PLUS264 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V DSS J G D V T = 25C to 150C, R = 1M 1200 V S DGR J GS Tab V Continuous 30 V GSS V Transient 40 V G = Gate D = Drain GSM S = Source Tab = Drain I T = 25C30A D25 C I T = 25C, Pulse Width Limited by T 75 A DM C JM I T = 25C15A A C E T = 25C 2.0 J AS C Features dv/dt I I , V V ,T 150C 15 V/ns S DM DD DSS J z Fast Intrinsic Diode z P T = 25C 1250 W Avalanche Rated D C z Low R and Q T -55 ... +150 C DS(ON) G J z Low Package Inductance T 150 C JM T -55 ... +150 C stg Advantages T 1.6mm (0.062 in.) from Case for 10s 300 C L z TM Plus 264 Package for Clip or Spring T Plastic Body for 10s 260 C SOLD Mounting z F Mounting Torque 30..120/6.7..27 N/lb. C High Power Density z Easy to Mount Weight 10 g z Space Savings Applications z High Voltage Switch-Mode and Resonant-Mode Power Supplies Symbol Test Conditions Characteristic Values z High Voltage Pulse Power (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications z High Voltage Discharge Circuits in BV V = 0V, I = 3mA 1200 V DSS GS D Laser Pulsers Spark Igniters, RF Generators V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D z High Voltage DC-DC Coverters I V = 30V, V = 0V 300 nA z GSS GS DS High Voltage DC-AC Inverters I V = V , V = 0V 50 A DSS DS DSS GS T = 125C 5.0 mA J R V = 10V, I = 0.5 I , Note 1 350 m DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS99825B(02/10) IXFB30N120P Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 13 22 S fs DS D D25 C 22.5 nF iss C V = 0V, V = 25V, f = 1MHz 950 pF oss GS DS C 28 pF rss R Gate Input Resistance 1.64 Gi t 57 ns d(on) Resistive Switching Times t 60 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 95 ns d(off) R = 1 (External) G t 56 ns f Q 310 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 104 nC gs GS DS DSS D D25 Q 137 nC gd R 0.10 C/W thJC R 0.13 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 30 A S GS I Repetitive, Pulse Width Limited by T 120 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 0.5 I , V = 0V F D25 GS Q -di/dt = 100A/s 1.6 C RM V = 100V R I 14 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537