Advance Technical Information TM HiperFET V = 1000V IXFB44N100Q3 DSS Power MOSFET I = 44A D25 Q3-Class R 220m DS(on) t 300ns rr N-Channel Enhancement Mode Fast Intrinsic Rectifier TM PLUS264 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1000 V DSS J G V T = 25C to 150C, R = 1M 1000 V DGR J GS D S V Continuous 30 V GSS Tab V Transient 40 V GSM I T = 25C 44 A G = Gate D = Drain D25 C S = Source Tab = Drain I T = 25C, Pulse Width Limited by T 110 A DM C JM I T = 25C 44 A A C E T = 25C4J Features AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J z Low Intrinsic Gate Resistance P T = 25C 1560 W D C z Low Package Inductance T -55 ... +150 C z J Fast Intrinsic Rectifier T 150 C z JM Low R and Q DS(on) G T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L Advantages T Plastic Body for 10s 260 C SOLD F Mounting Force 30..120/6.7..27 N/lb. z C High Power Density z Easy to Mount Weight 10 g z Space Savings Applications z DC-DC Converters z Battery Chargers Symbol Test Conditions Characteristic Values z Switch-Mode and Resonant-Mode (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Power Supplies BV V = 0V, I = 3mA 1000 V z DC Choppers DSS GS D z Temperature and Lighting Controls V V = V , I = 8mA 3.5 6.5 V GS(th) DS GS D I V = 30V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 50 A DSS DS DSS GS T = 125C 3 mA J R V = 10V, I = 0.5 I , Note 1 220 m DS(on) GS D D25 2011 IXYS CORPORATION, All Rights Reserved DS100307(03/11) IXFB44N100Q3 Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 26 43 S fs DS D D25 C 13.6 nF iss C V = 0V, V = 25V, f = 1MHz 1046 pF oss GS DS C 86 pF rss R Gate Input Resistance 0.12 Gi t 48 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 66 ns d(off) R = 0.5 (External) G t 28 ns f Q 264 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 76 nC gs GS DS DSS D D25 Q 110 nC gd R 0.08 C/W thJC R 0.13 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 44 A S GS I Repetitive, Pulse Width Limited by T 176 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 300 ns rr I = 22A, -di/dt = 100A/s F Q 2.1 C RM V = 100V, V = 0V R GS I 16.2 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537