TM IXFB 82N60P V = 600 V PolarHV HiPerFET DSS I = 82 A D25 Power MOSFET R 75 m DS(on) N-Channel Enhancement Mode t 200 ns rr Avalanche Rated Fast Intrinsic Diode TM Symbol Test Conditions Maximum Ratings PLUS264 (IXFB) V T = 25C to 150C 600 V DSS J V T = 25C to 150C R = 1 M 600 V DGR J GS V Continuous 30 V GSS (TAB) G V Transient 40 V GSM D S I T = 25C82A D25 C I External lead current limit 75 A DRMS I T = 25C, pulse width limited by T 200 A DM C JM G = Gate D = Drain S = Source TAB = Drain I T = 25C82A AR C E T = 25C 100 mJ AR C E T = 25C5J AS C Features dv/dt I I , di/dt 100 A/s, V V , 20 V/ns S DM DD DSS z International standard packages T 150C, R = 2 J G z Fast recovery diode P T = 25C 1250 W z D C Unclamped Inductive Switching (UIS) rated T -55 ... +150 C J z Low package inductance T 150 C JM - easy to drive and to protect T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C Advantages SOLD F Mounting force 30..120/7.5...2.7 N/lb C z TM Plus 264 package for clip or spring z Space savings Weight 10 g z High power density Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 3 mA 600 V DSS GS D V V = V , I = 8 mA 3.0 5.0 V GS(th) DS GS D I V = 30 V , V = 0 200 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 125C 2000 A GS J R V = 10 V, I = 0.5 I , Note 1 75 m DS(on) GS D D25 DS99530E(08/06) 2006 IXYS All rights reserved IXFB 82N60P Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , Note 1 50 80 S fs DS D D25 C 23 nF iss C V = 0 V, V = 25 V, f = 1 MHz 1490 pF oss GS DS C 200 pF rss t 28 ns d(on) t V = 10 V, V = 0.5 V , I =0.5 I 23 ns r GS DS DSS D D25 t R = 1 (External) 79 ns d(off) G t 24 ns f Q 240 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 96 nC gs GS DS DSS D D25 Q 67 nC gd R 0.10 C/W thJC R 0.13 C/W thCS Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 82 A S GS I Repetitive 200 A SM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t I = 25A, -di/dt = 100 A/s 200 ns rr F Q V = 100V 0.6 C RM R I 6.0 A RM Notes: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2