Advance Technical Information TM IXFH 12N100F V = 1000 V HiPerRF DSS IXFT 12N100F I = 12 A D25 Power MOSFETs R = 1.05 DS(on) F-Class: MegaHertz Switching t 250 ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , Low Intrinsic R g g High dV/dt, Low t rr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings (TAB) V T = 25C to 150C 1000 V DSS J V T = 25C to 150C R = 1 M 1000 V DGR J GS V Continuous 20 V GS TO-268 (IXFT) Case Style V Transient 30 V GSM I T = 25C12A D25 C I T = 25C, pulse width limited by T 48 A DM C JM I T = 25C12A AR C G (TAB) S E T = 25C30mJ AR C E T = 25C 1.0 J AS C G = Gate, D = Drain, dv/dt I I , di/dt 100 A/ s, V V 5 V/ns S DM DD DSS S = Source, TAB = Drain T 150C, R = 2 J G P T = 25C 300 W D C Features T -55 ... +150 C RF capable MOSFETs J Double metal process for low gate T 150 C JM resistance T -55 ... +150 C stg Rugged polysilicon gate cell structure T 1.6 mm (0.063 in.) from case for 10 s 300 C L Unclamped Inductive Switching (UIS) M Mounting torque TO-247 1.13/10 Nm/lb.in. rated d Low package inductance Weight TO-247 6 g - easy to drive and to protect TO-268 4 g Fast intrinsic rectifier Applications DC-DC converters Symbol Test Conditions Characteristic Values Switched-mode and resonant-mode (T = 25C, unless otherwise specified) J power supplies, >500kHz switching min. typ. max. DC choppers V V = 0 V, I = 1mA 1000 V DSS GS D 13.5 MHz industrial applications V V = V , I = 4mA 3.0 5.5 V Pulse generation GS(th) DS GS D Laser drivers I V = 20 V, V = 0 100 nA GSS GS DS RF amplifiers I V = V 50 A DSS DS DSS Advantages V = 0 V T = 125C 1.5 mA GS J Space savings R V = 10 V, I = 0.5 I 1.05 DS(on) GS D D25 High power density Note 1 98856 (8/01) 2001 IXYS All rights reservedIXFH 12N100F IXFT 12N100F Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J TO-247 AD Outline min. typ. max. g V = 10 V I = 0.5 I Note 1 8 12 S fs DS D D25 C 2700 pF iss 1 2 3 Terminals: C V = 0 V, V = 25 V, f = 1 MHz 305 pF 1 - Gate oss GS DS 2 - Drain C 93 pF rss 3 - Source Tab - Drain t 12 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 9.8 ns r GS DS DSS D D25 t R = 2.0 (External) 31 ns d(off) G t 12 ns Dim. Millimeter Inches f Min. Max. Min. Max. Q 77 nC A 4.7 5.3 .185 .209 g(on) A 2.2 2.54 .087 .102 1 Q V = 10 V, V = 0.5 V , I = 0.5 I 16 nC A 2.2 2.6 .059 .098 gs GS DS DSS D D25 2 b 1.0 1.4 .040 .055 Q 42 nC gd b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 R 0.42 K/W thJC C .4 .8 .016 .031 D 20.80 21.46 .819 .845 R (TO-247) 0.25 K/W thCK E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 (T = 25C, unless otherwise specified) J R 4.32 5.49 .170 .216 Symbol Test Conditions min. typ. max. S 6.15 BSC 242 BSC I V = 0 V 12 A S GS TO-268 Outline I Repetitive 48 A SM pulse width limited by T JM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t 250 ns rr I = I ,-di/dt = 100 A/ s, V = 100 V Q 0.8 C F S R RM I 7A RM Note: 1. Pulse test, t 300 s, duty cycle d 2 % Dim. Millimeter Inches Min. Max. Min. Max. A 4.9 5.1 .193 .201 Min Recommended Footprint A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025