TM V = 1000V IXFH20N100P Polar Power MOSFET DSS I = 20A TM IXFT20N100P HiPerFET D25 R 570m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS TAB V Continuous 30 V GSS V Transient 40 V GSM I T = 25C20A D25 C TO-268 (IXFT) I T = 25C, pulse width limited by T 50 A DM C JM I T = 25C10A AR C E T = 25C 800 mJ AS C G S dV/dt I I , V V ,T 150C 15 V/ns TAB S DM DD DSS J P T = 25C 660 W D C G = Gate D = Drain T -55 ... +150 C J S = Source TAB = Drain T 150 C JM T -55 ... +150 C stg Features T Maximum lead temperature for soldering 300 C L z International standard packages T Plastic body for 10s 260 C SOLD z Fast recovery diode z M Mounting torque (TO-247) 1.13/10 Nm/lb.in. Unclamped Inductive Switching (UIS) d rated Weight TO-247 6 g z Low package inductance TO-268 5 g - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J BV V = 0V, I = 1mA 1000 V DSS GS D Applications: V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D z Switched-mode and resonant-mode I V = 30V, V = 0V 200 nA power supplies GSS GS DS z DC-DC Converters I V = V 25 A z DSS DS DSS Laser Drivers V = 0V T = 125C 1.5 mA z GS J AC and DC motor controls z Robotics and servo controls R V = 10V, I = 0.5 I , Note 1 470 570 m DS(on) GS D D25 2008 IXYS CORPORATION, All rights reserved DS99843B(04/08) IXFH20N100P IXFT20N100P Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 8 14 S fs DS D D25 C 7300 pF iss P C V = 0V, V = 25V, f = 1MHz 456 pF oss GS DS C 55 pF rss R Gate input resistance 1.20 Gi t 40 ns d(on) t Resistive Switching Times 37 ns r e t V = 10V, V = 0.5 V , I = 0.5 I 56 ns Dim. Millimeter Inches d(off) GS DS DSS D D25 Min. Max. Min. Max. t R = 2 (External) 45 ns f G A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 Q 126 nC 2 g(on) b 1.0 1.4 .040 .055 Q V = 10V, V = 0.5 V , I = 0.5 I 50 nC b 1.65 2.13 .065 .084 gs GS DS DSS D D25 1 b 2.87 3.12 .113 .123 2 Q 55 nC gd C .4 .8 .016 .031 D 20.80 21.46 .819 .845 R 0.19 C/W thJC E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 R (TO-247) 0.21 C/W thCS L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 Source-Drain Diode Characteristic Values R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC T = 25C unless otherwise specified) Min. Typ. Max. J I V = 0V 20 A S GS TO-268 Outline I Repetitive, pulse width limited by T 80 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns I = 10A, -di/dt = 100A/s rr F Q 0.9 C RM V = 100V, V = 0V R GS I 9.0 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537